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A Theoretical Review on Challenges and Solutions of the Free Radical Scavenging Capability of Single-Walled Carbon Nanotubes (SWCNTs) Read chapter Read first chapter

2024 | OriginalPaper | Chapter

Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET

Authors : Sangita R. Panda, Manoranjan Pradhan, Trinath Sahu, Ajit Kumar Panda

Published in: Micro and Nanoelectronics Devices, Circuits and Systems

Publisher: Springer Nature Singapore

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Abstract

The mobility, µ of electrons shows oscillating behavior in an asymmetric GaAs/InxGa1-xAs Quantum Well (QW) Field Effect Transistor (FET) structure. So as to analyze µ, we take asymmetric doping concentrations, varying Nd1 in the substrate barrier and keeping Nd2 constant in surface barrier. The well widths W1 and W2 are also asymmetrically changed such that the sum (W1 + W2) remains constant. Resonance can be achieved for the subband energy states between the two QWs for a set of W1 and W2 by varying Nd1. A considerable variation is observed in spreading of subband wave functions near resonance that affect the subband mobilities through intersubband effects, thus causing a drop in µ. We show that dip in µ enhances by decreasing the difference in W1 and W2. The results of nonlinearity in µ can help in analyzing the characteristics of the QWFET devices near resonance.

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Metadata
Title
Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET
Authors
Sangita R. Panda
Manoranjan Pradhan
Trinath Sahu
Ajit Kumar Panda
Copyright Year
2024
Publisher
Springer Nature Singapore
Book
Micro and Nanoelectronics Devices, Circuits and Systems

Print ISBN: 978-981-9944-94-1

Electronic ISBN: 978-981-9944-95-8

Copyright Year: 2024

DOI
https://doi.org/10.1007/978-981-99-4495-8_7