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Semiconductors

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01-12-2019 | NANOSTRUCTURES TECHNOLOGY

Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

Authors: L. V. Danilov, R. V. Levin, V. N. Nevedomskyi, B. V. Pushnyi

Published in: Semiconductors | Issue 16/2019

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Abstract

This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.

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Title: Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD
Authors: L. V. Danilov
R. V. Levin
V. N. Nevedomskyi
B. V. Pushnyi
Publication date: 01-12-2019
Publisher: Pleiades Publishing
Published in: Semiconductors / Issue 16/2019
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782619120091

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