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Published in:
2012 | OriginalPaper | Chapter
Output Power Analysis and Simulations of Resonant Tunneling Diode Based Oscillators
Author : Liquan Wang
Published in: System Simulation and Scientific Computing
Publisher: Springer Berlin Heidelberg
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Negative differential resistance (NDR) devices such as Esaki tunnel diodes (TD), Gunn diodes and resonant tunneling diodes (RTD) are excellent in the realization of high frequency oscillators. However, for tunnel diodes and RTDs, which have large negative differential conductance, the output power tends to be low due to the DC instability, parasitic oscillations and the small area devices employed. In this paper, the maximum device areas for different NDR oscillator topologies, such as waveguide topology and planar topology, were calculated. The result shows that NDR devices for planar oscillators can be much larger (ranging from 3 to 1600 times) than those could be used in waveguide oscillators. A derivation of the maximum RF output power of a parallel RTD oscillator circuit is given and the simulations show that ~1 mW output power could be achieved at 800 GHz for a single diode oscillator.