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Journal of Materials Science

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01-10-2009

Oxidation resistance of hafnium diboride—silicon carbide from 1400 to 2000 °C

Author: Carmen M. Carney

Published in: Journal of Materials Science | Issue 20/2009

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Abstract

Oxidation resistance tests were carried out on HfB₂-20 vol.% SiC prepared by spark plasma sintering. The dense samples were exposed from 1400 to 2000 °C in an ambient atmosphere for 1 h. For comparison, the same material was tested using an arc jet to simulate an atmospheric reentry environment. The oxidation properties of the samples were determined by measuring the weight gain per unit surface area and the thicknesses of the oxide scale. The oxide scale consists of a SiO₂ outer layer, porous HfO₂ layers, and an HfB₂ layer depleted in SiC. A transition in HfO₂ morphology from equixed to columnar and a decrease in SiO₂ viscosity between 1800 and 1900 °C accompanied a rapid increase in weight gain and scale thickness.

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Title: Oxidation resistance of hafnium diboride—silicon carbide from 1400 to 2000 °C
Author: Carmen M. Carney
Publication date: 01-10-2009
Publisher: Springer US
Published in: Journal of Materials Science / Issue 20/2009
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-009-3799-7

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