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Semiconductors
Published in: Semiconductors 7/2023

01-07-2023

Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy

Authors: E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, A. A. Pivovarova, N. D. Il’inskaya, Yu. P. Yakovlev, Ya. Ya. Ponurovskii, A. I. Nadezhdinskii, A. S. Kuz’michev, D. B. Stavrovskii, M. V. Spiridonov

Published in: Semiconductors | Issue 7/2023

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Abstract

The paper considers the uncooled photodetectors based on GalnAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0–2.4 μm. The current monochromatic sensitivity at the wavelength of 2.1 μm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800–5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing the gas compositions of exhaled air, for control of impurity gases in the process of rectification of inorganic hydrides, control of methane leaks in gas pipelines, as well as for registration of exhaust gases of a moving car are presented.
previous article Localized π-Electron States in the Optical Absorption Spectrum of Tetrahedrally Coordinated Amorphous Carbon
next article Polaron Mass of Carriers in a Thin Film on Ionic Substrates

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Metadata
Title
Photodetectors Based on GalnAsSb/GaAlAsSb Heterostructures for the Practical Tasks of Precision Diode Laser Spectroscopy
Authors
E. V. Kunitsyna
I. A. Andreev
G. G. Konovalov
A. A. Pivovarova
N. D. Il’inskaya
Yu. P. Yakovlev
Ya. Ya. Ponurovskii
A. I. Nadezhdinskii
A. S. Kuz’michev
D. B. Stavrovskii
M. V. Spiridonov
Publication date
01-07-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 7/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623090099

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