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Optical and Quantum Electronics

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01-02-2016

Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers

Authors: Wei-Wei Wang, Wen-Guo Ning, Bin Zhang, Fang-Min Guo

Published in: Optical and Quantum Electronics | Issue 2/2016

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Abstract

An InAlAs/InGaAs/InAs quantum dots–quantum well in double barrier structure was simulated and analyzed in this paper. InGaAs electroluminescence spectrum, photoluminescence spectrum and current–voltage are numerically investigated in detail. Further, the photocurrent spectrum of the detector based on quantum dot in well with near-infrared response and the response can be tailored to 1.70 μm. The S (signal)/N (noise) may work on 3.5 and −1.3 V at 300 K. The paper also presents the observation of photo memory under different external driving voltage and the storage time can reach about 80 μs by a light pulse. At last, the oscillation is observed by a low temperature test for the GaAs/AlAs hybrid structure, which is attributed to a sequential single-phonon emission by ballistic electrons.

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Title: Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers
Authors: Wei-Wei Wang
Wen-Guo Ning
Bin Zhang
Fang-Min Guo
Publication date: 01-02-2016
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 2/2016
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-015-0360-6

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