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Optical and Quantum Electronics

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01-07-2013

Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure

Authors: L. Ding, L. Fan, Y. Q. Li, F. M. Guo

Published in: Optical and Quantum Electronics | Issue 7/2013

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Abstract

In this paper we present a physical modeling and simulation result of an optical memory cell based on a semiconductor quantum-dot in quantum-well hybrid structure. The physical modeling and simulation were done in Crosslight Apsys software which offers advanced models for photoelectric devices. We have optimized the scan conditions, iterative algorithm and other simulation parameters in order to obtain a solution. The calculated I–V and C–V curves agree with the experimental results and demonstrate that the cell can be used for photon storage.

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APSYS User’s Manual. http://www.crosslight.com (2011)

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Title: Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure
Authors: L. Ding
L. Fan
Y. Q. Li
F. M. Guo
Publication date: 01-07-2013
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 7/2013
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-013-9663-7

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