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Semiconductors
Published in: Semiconductors 7/2019

01-07-2019 | FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Properties of Semipolar GaN Grown on a Si(100) Substrate

Authors: V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Shcheglov, D. S. Kibalov, V. K. Smirnov

Published in: Semiconductors | Issue 7/2019

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Abstract

Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10\(\bar {1}\)2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10\(\bar {1}\)1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.
previous article Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides
next article Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy

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Metadata
Title
Properties of Semipolar GaN Grown on a Si(100) Substrate
Authors
V. N. Bessolov
E. V. Konenkova
T. A. Orlova
S. N. Rodin
N. V. Seredova
A. V. Solomnikova
M. P. Shcheglov
D. S. Kibalov
V. K. Smirnov
Publication date
01-07-2019
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 7/2019
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782619070054

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