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Raman Spectroscopy of Monolayer and Multilayer Graphenes Read chapter Read first chapter

2019 | OriginalPaper | Chapter

2. Raman Spectroscopy of Isotropic Two-Dimensional Materials Beyond Graphene

Authors : Xin Lu, Qing-Hai Tan, Qihua Xiong, Jun Zhang

Published in: Raman Spectroscopy of Two-Dimensional Materials

Publisher: Springer Singapore

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Abstract

In this chapter, we will focus on the isotropic (or rather less anisotropic) two-dimensional layered materials, including the layered transition metal dichalcogenides, the topologically insulating Bi2X3 (X = Se, Te) etc.

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Literature
1.
Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotech. 7, 699–712 (2012)CrossRef
2.
M. Chhowalla, H.S. Shin, G. Eda, L.J. Li, K.P. Loh, H.Z. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013)CrossRef
3.
A.K. Geim, I.V. Van der Grigorieva, Waals heterostructures. Nature 499, 419–425 (2013)CrossRef
4.
K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, A.K. Geim, Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U. S. A. 102, 10451–10453 (2005)CrossRef
5.
X. Xu, W. Yao, D. Xiao, T.F. Heinz, Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343–350 (2014)CrossRef
6.
K.F. Mak, K. He, J. Shan, T.F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotech. 7, 494–498 (2012)CrossRef
7.
H. Zeng, J. Dai, W. Yao, D. Xiao, X. Cui, Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotech. 7, 490–493 (2012)CrossRef
8.
T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, J. Feng, Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 3, 887 (2012)CrossRef
9.
K.F. Mak, K.L. McGill, J. Park, P.L. McEuen, The valley hall effect in MoS2 transistors. Science 344, 1489–1492 (2014)CrossRef
10.
S.F. Wu, J.S. Ross, G.B. Liu, G. Aivazian, A. Jones, Z.Y. Fei, W.G. Zhu, D. Xiao, W. Yao, D. Cobden, X.D. Xu, Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nat. Phys. 9, 149–153 (2013)CrossRef
11.
J. Lee, K.F. Mak, J. Shan, Electrical control of the valley hall effect in bilayer MoS2 transistors. Nat. Nanotech. 11, 421–425 (2016)CrossRef
12.
K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010)CrossRef
13.
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010)CrossRef
14.
X. Lu, X. Luo, J. Zhang, S.Y. Quek, Q.H. Xiong, Lattice vibrations and Raman scattering in two-dimensional layered materials beyond graphene. Nano Res. 9, 3559–3597 (2016)CrossRef
15.
X. Qian, J. Liu, L. Fu, J. Li, Quantum spin hall effect in two-dimensional transition metal dichalcogenides. Science 346, 1344–1347 (2014)CrossRef
16.
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotech. 6, 147–150 (2011)CrossRef
17.
X. Zhang, X.-F. Qiao, W. Shi, J.-B. Wu, D.-S. Jiang, P.-H. Tan, Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 44, 2757–2785 (2015)CrossRef
18.
X. Lu, M.I.B. Utama, J. Lin, X. Luo, Y. Zhao, J. Zhang, S.T. Pantelides, W. Zhou, S.Y. Quek, Q.H. Xiong, Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy. Adv. Mater. 27, 4502–4508 (2015)CrossRef
19.
R. Suzuki, M. Sakano, Y.J. Zhang, R. Akashi, D. Morikawa, A. Harasawa, K. Yaji, K. Kuroda, K. Miyamoto, T. Okuda, K. Ishizaka, R. Arita, Y. Iwasa, Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. Nat. Nanotech. 9, 611–617 (2014)CrossRef
20.
D.H. Keum, S. Cho, J.H. Kim, D.-H. Choe, H.-J. Sung, M. Kan, H. Kang, J.-Y. Hwang, S.W. Kim, H. Yang, K.J. Chang, Y.H. Lee, Bandgap opening in few-layered monoclinic MoTe2. Nat. Phys. 11, 482–U144 (2015)CrossRef
21.
Q.J. Song, Q.H. Tan, X. Zhang, J.B. Wu, B.W. Sheng, Y. Wan, X.Q. Wang, L. Dai, P.H. Tan, Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2. Phys. Rev. B 93, 115409 (2016)CrossRef
22.
G. Froehlicher, E. Lorchat, F. Fernique, C. Joshi, A. Molina-Sanchez, L. Wirtz, S. Berciaud, Unified description of the optical phonon modes in N-layer MoTe2. Nano Lett. 15, 6481–6489 (2015)CrossRef
23.
C. Ruppert, O.B. Aslan, T.F. Heinz, Optical properties and band gap of single- and few-layer MoTe2 crystals. Nano Lett. 14, 6231–6236 (2014)CrossRef
24.
Y. Kim, Y.I. Jhon, J. Park, J.H. Kim, S. Lee, Y.M. Jhon, Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe2. Nanoscale 8, 2309–2316 (2016)CrossRef
25.
Y.C. Jiang, J. Gao, L. Wang, Raman fingerprint for semi-metal WTe2 evolving from bulk to monolayer. Sci. Rep. 6, 19624 (2016)CrossRef
26.
Y. Zhao, X. Luo, H. Li, J. Zhang, P.T. Araujo, C.K. Gan, J. Wu, H. Zhang, S.Y. Quek, M.S. Dresselhaus, Q.H. Xiong, Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. Nano Lett. 13, 1007–1015 (2013)CrossRef
27.
N. Wakabayashi, H.G. Smith, R.M. Nicklow, Lattice-dynamics of hexagonal MoS2 studied by neutron-scattering. Phys. Rev. B 12, 659–663 (1975)CrossRef
28.
A. Molina-Sanchez, L. Wirtz, Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 84, 155413 (2011)CrossRef
29.
J.L. Verble, T.J. Wieting, Lattice mode degeneracy in MoS2 and other layer compounds. Phys. Rev. Lett. 25, 362 (1970)CrossRef
30.
P.N. Ghosh, C.R. Maiti, Interlayer force and Davydov splitting in 2H-MoS2. Phys. Rev. B 28, 2237–2239 (1983)CrossRef
31.
T.J. Wieting, J.L. Verble, Infrared and Raman studies of long-wavelength optical phonons in hexagonal MoS2. Phys. Rev. B 3, 4286 (1971)CrossRef
32.
C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 4, 2695–2700 (2010)CrossRef
33.
X. Luo, Y. Zhao, J. Zhang, Q. Xiong, S.Y. Quek, Anomalous frequency trends in MoS2 thin films attributed to surface effects. Phys. Rev. B 88, 075320 (2013)CrossRef
34.
H. Zeng, B. Zhu, K. Liu, J. Fan, X. Cui, Q.M. Zhang, Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films. Phys. Rev. B 86, 241301(R) (2012)CrossRef
35.
H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat, From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385–1390 (2012)CrossRef
36.
W. Zhao, Z. Ghorannevis, K.K. Amara, J.R. Pang, M. Toh, X. Zhang, C. Kloc, P.H. Tan, G. Eda, Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2. Nanoscale 5, 9677–9683 (2013)CrossRef
37.
P. Tonndorf, R. Schmidt, P. Boettger, X. Zhang, J. Boerner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D.R.T. Zahn, S.M. de Vasconcellos, R. Bratschitsch, Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 21, 4908–4916 (2013)CrossRef
38.
J.-H. Fan, P. Gao, A.-M. Zhang, B.-R. Zhu, H.-L. Zeng, X.-D. Cui, R. He, Q.-M. Zhang, Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer MoS2. J. Appl. Phys. 115, 053527 (2014)CrossRef
39.
H. Richter, Z.P. Wang, L. Ley, The one phonon Raman-spectrum in microcrystalline silicon. Solid State Commun. 39, 625–629 (1981)CrossRef
40.
R.P. Wang, G.W. Zhou, Y.L. Liu, S.H. Pan, H.Z. Zhang, D.P. Yu, Z. Zhang, Raman spectral study of silicon nanowires: high-order scattering and phonon confinement effects. Phys. Rev. B 61, 16827–16832 (2000)CrossRef
41.
K.W. Adu, H.R. Gutierrez, U.J. Kim, P.C. Eklund, Inhomogeneous laser heating and phonon confinement in silicon nanowires: a micro-Raman scattering study. Phys. Rev. B 73, 155333 (2006)CrossRef
42.
K.W. Adu, Q. Xiong, H.R. Gutierrez, G. Chen, P.C. Eklund, Raman scattering as a probe of phonon confinement and surface optical modes in semiconducting nanowires. Appl. Phys. A Mater. Sci. Process. 85, 287–297 (2006)CrossRef
43.
Y. Lin, X. Ling, L. Yu, S. Huang, A.L. Hsu, Y.-H. Lee, J. Kong, M.S. Dressehaus, T. Palacios, Dielectric screening of excitons and trions in single-layer MoS2. Nano Lett. 14, 5569–5576 (2014)CrossRef
44.
A. Molina-Sanchez, K. Hummer, L. Wirtz, Vibrational and optical properties of MoS2: from monolayer to bulk. Surf. Sci. Rep. 70, 554–586 (2015)CrossRef
45.
J. Yan, J. Xia, X. Wang, L. Liu, J.-L. Kuo, B.K. Tay, S. Chen, W. Zhou, Z. Liu, Z.X. Shen, Stacking-dependent interlayer coupling in Trilayer MoS2 with broken inversion symmetry. Nano Lett. 15, 8155–8161 (2015)CrossRef
46.
J.-U. Lee, K. Kim, S. Han, G.H. Ryu, Z. Lee, H. Cheong, Raman signatures of polytypism in molybdenum disulfide. ACS Nano 10, 1948–1953 (2016)CrossRef
47.
A.A. Puretzky, L. Liang, X. Li, K. Xiao, K. Wang, M. Mahjouri-Samani, L. Basile, J.C. Idrobo, B.G. Sumpter, V. Meunier, D.B. Geohegan, Low-frequency Raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations. ACS Nano 9, 6333–6342 (2015)CrossRef
48.
X.-F. Qiao, J.-B. Wu, L. Zhou, J. Qiao, W. Shi, T. Chen, X. Zhang, J. Zhang, W. Ji, P.-H. Tan, Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2. Nanoscale 8, 8324–8332 (2016)CrossRef
49.
R. He, J.-A. Yan, Z. Yin, Z. Ye, G. Ye, J. Cheng, J. Li, C.H. Lui, Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy. Nano Lett. 16, 1404–1409 (2016)CrossRef
50.
Y. Yoo, Z.P. Degregorio, Y. Su, S.J. Koester, J.E. Johns, In-plane 2H-1T’ MoTe2 homojunctions synthesized by flux-controlled phase engineering. Adv. Mater. 29, 1605461 (2017)CrossRef
51.
J.J. Wu, M.J. Liu, K. Chatterjee, K.P. Hackenberg, J.F. Shen, X.L. Zou, Y. Yan, J. Gu, Y.C. Yang, J. Lou, P.M. Ajayan, Exfoliated 2D transition metal disulfides for enhanced electrocatalysis of oxygen evolution reaction in acidic medium. Adv. Mater. Interfaces 3, 1500669 (2016)CrossRef
52.
B.R. Carvalho, L.M. Malard, J.M. Alves, C. Fantini, M.A. Pimenta, Symmetry-dependent exciton-phonon coupling in 2D and bulk MoS2 observed by resonance Raman scattering. Phys. Rev. Lett. 114, 136403 (2015)CrossRef
53.
L. Sun, J. Yan, D. Zhan, L. Liu, H. Hu, H. Li, B.K. Tay, J.-L. Kuo, C.-C. Huang, D.W. Hewak, P.S. Lee, Z.X. Shen, Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering. Phys. Rev. Lett. 111, 126801 (2013)CrossRef
54.
Y. Wang, C. Cong, C. Qiu, T. Yu, Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 9, 2857–2861 (2013)CrossRef
55.
B. Chakraborty, A. Bera, D.V.S. Muthu, S. Bhowmick, U.V. Waghmare, A.K. Sood, Symmetry-dependent phonon renormalization in monolayer MoS2 transistor. Phys. Rev. B 85, 161403(R) (2012)CrossRef
56.
R.S. Yan, J.R. Simpson, S. Bertolazzi, J. Brivio, M. Watson, X.F. Wu, A. Kis, T.F. Luo, A.R.H. Walker, H.G. Xing, Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy. ACS Nano 8, 986–993 (2014)CrossRef
57.
S. Sahoo, A.P.S. Gaur, M. Ahmadi, M.J.F. Guinel, R.S. Katiyar, Temperature-dependent Raman studies and thermal conductivity of few-layer MoS2. J. Phys. Chem. C 117, 9042–9047 (2013)CrossRef
58.
N.A. Lanzillo, A.G. Birdwell, M. Amani, F.J. Crowne, P.B. Shah, S. Najmaei, Z. Liu, P.M. Ajayan, J. Lou, M. Dubey, S.K. Nayak, T.P. O’Regan, Temperature-dependent phonon shifts in monolayer MoS2. Appl. Phys. Lett. 103, 093102 (2013)CrossRef
59.
A. Taube, J. Judek, C. Jastrzebski, A. Duzynska, K. Switkowski, M. Zdrojek, Temperature-dependent nonlinear phonon shifts in a supported MoS2 monolayer. ACS Appl. Mater. Interfaces 6, 8959–8963 (2014)CrossRef
60.
A.A. Balandin, S. Ghosh, W.Z. Bao, I. Calizo, D. Teweldebrhan, F. Miao, C.N. Lau, Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902–907 (2008)CrossRef
61.
S. Najmaei, Z. Liu, P.M. Ajayan, J. Lou, Thermal effects on the characteristic Raman spectrum of molybdenum disulfide (MoS2) of varying thicknesses. Appl. Phys. Lett. 100, 013106 (2012)CrossRef
62.
C.R. Zhu, G. Wang, B.L. Liu, X. Marie, X.F. Qiao, X. Zhang, X.X. Wu, H. Fan, P.H. Tan, T. Amand, B. Urbaszek, Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2. Phys. Rev. B 88, 121301(R) (2013)CrossRef
63.
C.-H. Chang, X. Fan, S.-H. Lin, J.-L. Kuo, Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain. Phys. Rev. B 88, 125120 (2013)CrossRef
64.
M. Thripuranthaka, D.J. Late, Temperature dependent phonon shifts in single-layer WS2. ACS Appl. Mater. Interfaces 6, 1158–1163 (2014)CrossRef
65.
Y.Q. Cai, J.H. Lan, G. Zhang, Y.W. Zhang, Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2. Phys. Rev. B 89, 035438 (2014)CrossRef
66.
X.-L. Qi, S.-C. Zhang, Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057–1110 (2011)CrossRef
67.
M.Z. Hasan, C.L. Kane, Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045–3067 (2010)CrossRef
68.
J.E. Moore, The birth of topological insulators. Nature 464, 194–198 (2010)CrossRef
69.
H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, S.-C. Zhang, Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 5, 438–442 (2009)CrossRef
70.
Y.L. Chen, J.G. Analytis, J.H. Chu, Z.K. Liu, S.K. Mo, X.L. Qi, H.J. Zhang, D.H. Lu, X. Dai, Z. Fang, S.C. Zhang, I.R. Fisher, Z. Hussain, Z.X. Shen, Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science 325, 178–181 (2009)CrossRef
71.
A. Soni, Y. Zhao, L. Yu, M.K.K. Aik, M.S. Dresselhaus, Q. Xiong, Enhanced thermoelectric properties of solution grown Bi2Te3 −xSex Nanoplatelet composites. Nano Lett. 12, 1203–1209 (2012)CrossRef
72.
J. Zhang, Z. Peng, A. Soni, Y. Zhao, Y. Xiong, B. Peng, J. Wang, M.S. Dresselhaus, Q.H. Xiong, Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets. Nano Lett. 11, 2407–2414 (2011)CrossRef
73.
G.L. Frey, R. Tenne, M.J. Matthews, M.S. Dresselhaus, G. Dresselhaus, Raman and resonance Raman investigation of MoS2 nanoparticles. Phys. Rev. B 60, 2883–2892 (1999)CrossRef
74.
Q.-C. Sun, D. Mazumdar, L. Yadgarov, R. Rosentsveig, R. Tenne, J.L. Musfeldt, Spectroscopic determination of phonon lifetimes in rhenium-doped MoS2 nanoparticles. Nano Lett. 13, 2803–2808 (2013)CrossRef
75.
C. Wang, X. Zhu, L. Nilsson, J. Wen, G. Wang, X. Shan, Q. Zhang, S. Zhang, J. Jia, Q. Xue, In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness. Nano Res. 6, 688–692 (2013)CrossRef
76.
Y. Zhao, X. Luo, J. Zhang, J. Wu, X. Bai, M. Wang, J. Jia, H. Peng, Z. Liu, S.Y. Quek, Q. Xiong, Interlayer vibrational modes in few-quintuple-layer Bi2Te3 and Bi2Se3 two-dimensional crystals: Raman spectroscopy and first-principles studies. Phys. Rev. B 90, 245428 (2014)CrossRef
77.
A.D. Laforge, A. Frenzel, B.C. Pursley, T. Lin, X. Liu, J. Shi, D.N. Basov, Optical characterization of Bi2Se3 in a magnetic field: Infrared evidence for magnetoelectric coupling in a topological insulator material. Phys. Rev. B 81, 125120 (2010)CrossRef
78.
P. Di Pietro, M. Ortolani, O. Limaj, A. Di Gaspare, V. Giliberti, F. Giorgianni, M. Brahlek, N. Bansal, N. Koirala, S. Oh, P. Calvani, S. Lupi, Observation of Dirac plasmons in a topological insulator. Nat. Nanotech. 8, 556–560 (2013)CrossRef
79.
C. Chen, Z. Xie, Y. Feng, H. Yi, A. Liang, S. He, D. Mou, J. He, Y. Peng, X. Liu, Y. Liu, L. Zhao, G. Liu, X. Dong, J. Zhang, L. Yu, X. Wang, Q. Peng, Z. Wang, S. Zhang, F. Yang, C. Chen, Z. Xu, X.J. Zhou, Tunable Dirac fermion dynamics in topological insulators. Sci. Rep. 3, 2411 (2013)CrossRef
80.
M.V. Costache, I. Neumann, J.F. Sierra, V. Marinova, M.M. Gospodinov, S. Roche, S.O. Valenzuela, Fingerprints of inelastic transport at the surface of the topological insulator Bi2Se3: role of Electron-phonon coupling. Phys. Rev. Lett. 112, 086601 (2014)CrossRef
81.
C.H. Zhang, Z.P. Peng, Z. Li, L.G. Yu, K.A. Khor, Q.H. Xiong, Controlled growth of bismuth antimony telluride BixSb2 − xTe3 nanoplatelets and their bulk thermoelectric nanocomposites. Nano Energy 15, 688–696 (2015)CrossRef
82.
M. Zhang, J.X. Wu, Y.M. Zhu, D.O. Dumcenco, J.H. Hong, N.N. Mao, S.B. Deng, Y.F. Chen, Y.L. Yang, C.H. Jin, S.H. Chaki, Y.S. Huang, J. Zhang, L.M. Xie, Two-dimensional molybdenum tungsten diselenide alloys: photoluminescence, Raman scattering, and electrical transport. ACS Nano 8, 7130–7137 (2014)CrossRef
83.
S. Tongay, D.S. Narang, J. Kang, W. Fan, C. Ko, A.V. Luce, K.X. Wang, J. Suh, K.D. Patel, V.M. Pathak, J. Li, J. Wu, Two-dimensional semiconductor alloys: monolayer Mo1 − xWxSe2. Appl. Phys. Lett. 104, 012101 (2014)CrossRef
84.
Y.F. Chen, W. Wen, Y.M. Zhu, N.N. Mao, Q.L. Feng, M. Zhang, H.P. Hsu, J. Zhang, Y.S. Huang, L.M. Xie, Temperature-dependent photoluminescence emission and Raman scattering from Mo1 − xWxS2 monolayers. Nanotechnology 27, 445705 (2016)CrossRef
85.
X.F. Qiao, X.L. Li, X. Zhang, W. Shi, J.B. Wu, T. Chen, P.H. Tan, Substrate-free layer-number identification of two-dimensional materials: a case of Mo0.5W0.5S2 alloy. Appl. Phys. Lett. 106, 223102 (2015)CrossRef
86.
S. Zheng, L. Sun, T. Yin, A.M. Dubrovkin, F. Liu, Z. Liu, Z.X. Shen, H.J. Fan, Monolayers of WxMo1 − xS2 alloy heterostructure with in-plane composition variations. Appl. Phys. Lett. 106, 063113 (2015)CrossRef
87.
Q.L. Feng, N.N. Mao, J.X. Wu, H. Xu, C.M. Wang, J. Zhang, L.M. Xie, Growth of MoS2(1 − x)Se2x (x = 0.41–1.00) monolayer alloys with controlled morphology by physical vapor deposition. ACS Nano 9, 7450–7455 (2015)CrossRef
88.
W.T. Zhang, X.D. Li, T.T. Jiang, J.L.Q. Song, Y. Lin, L.X. Zhu, X.L. Xu, CVD synthesis of Mo(1 − x)WxS2 and MoS2(1 − x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide. Nanoscale 7, 13554–13560 (2015)CrossRef
89.
Y.F. Chen, D.O. Dumcenco, Y.M. Zhu, X. Zhang, N.N. Mao, Q.L. Feng, M. Zhang, J. Zhang, P.H. Tan, Y.S. Huang, L.M. Xie, Composition-dependent Raman modes of Mo1 − xWxS2 monolayer alloys. Nanoscale 6, 2833–2839 (2014)CrossRef
90.
X. Lu, M.I.B. Utama, J. Lin, X. Gong, J. Zhang, Y. Zhao, S.T. Pantelides, J. Wang, Z. Dong, Z. Liu, W. Zhou, Q.H. Xiong, Large-area synthesis of monolayer and few-layer MoSe2 films on silicon substrates. Nano Lett. 14, 2419–2425 (2014)CrossRef
91.
X. Luo, Y. Zhao, J. Zhang, M. Toh, C. Kloc, Q. Xiong, S.Y. Quek, Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe2. Phys. Rev. B 88, 195313 (2013)CrossRef
92.
J.A. Wilson, F.J. Di Salvo, S. Mahajan, Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides (reprinted from Adv. Phys. 1974, 32, 882). Adv. Phys. 50, 1171–1248 (2001)CrossRef
93.
X.X. Xi, L. Zhao, Z.F. Wang, H. Berger, L. Forro, J. Shan, K.F. Mak, Strongly enhanced charge-density-wave order in monolayer NbSe2. Nat. Nanotech. 10, 765–770 (2015)CrossRef
94.
Y. Wu, M. An, R. Xiong, J. Shi, Q.M. Zhang, Raman scattering spectra in the normal phase of 2H-NbSe2. J. Phys. D. Appl. Phys. 41, 175408 (2008)CrossRef
95.
J.C. Tsang, J.E. Smith, M.W. Shafer, Raman-spectroscopy of soft modes at charge-density-wave phase-transition in 2h-NbSe2. Phys. Rev. Lett. 37, 1407–1410 (1976)CrossRef
96.
A. Mialitsin, Fano line shape and anti-crossing of Raman active E2g peaks in the charge density wave state of NbSe2. J. Phys. Chem. Solids 72, 568–571 (2011)CrossRef
97.
M.A. Measson, Y. Gallais, M. Cazayous, B. Clair, P. Rodiere, L. Cario, A. Sacuto, Amplitude Higgs mode in the 2H-NbSe2 superconductor. Phys. Rev. B 89, 060503(R) (2014)CrossRef
98.
J.F. Scott, Soft-mode spectroscopy: experimental studies of structural phase-transitions. Rev. Mod. Phys. 46, 83–128 (1974)CrossRef
99.
D.E. Moncton, J.D. Axe, F.J. Disalvo, Study of superlattice formation in 2H-NbSe2 and 2H-TaSe2 by neutron-scattering. Phys. Rev. Lett. 34, 734–737 (1975)CrossRef
100.
R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau, Raman spectroscopy of single-wall boron nitride nanotubes. Nano Lett. 6, 1812–1816 (2006)CrossRef
101.
R.V. Gorbachev, I. Riaz, R.R. Nair, R. Jalil, L. Britnell, B.D. Belle, E.W. Hill, K.S. Novoselov, K. Watanabe, T. Taniguchi, A.K. Geim, P. Blake, Hunting for monolayer boron nitride: optical and Raman signatures. Small 7, 465–468 (2011)CrossRef
102.
D. Golberg, Y. Bando, Y. Huang, T. Terao, M. Mitome, C.C. Tang, C.Y. Zhi, Boron nitride nanotubes and nanosheets. ACS Nano 4, 2979–2993 (2010)CrossRef
103.
C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y. Xia, T. Cao, W. Bao, C. Wang, Y. Wang, Z.Q. Qiu, R.J. Cava, S.G. Louie, J. Xia, X. Zhang, Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265–269 (2017)CrossRef
104.
B. Huang, G. Clark, E. Navarro-Moratalla, D.R. Klein, R. Cheng, K.L. Seyler, D. Zhong, E. Schmidgall, M.A. McGuire, D.H. Cobden, W. Yao, D. Xiao, P. Jarillo-Herrero, X.D. Xu, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270–273 (2017)CrossRef
105.
X.Z. Wang, K.Z. Du, Y.Y.F. Liu, P. Hu, J. Zhang, Q. Zhang, M.H.S. Owen, X. Lu, C.K. Gan, P. Sengupta, C. Kloc, Q.H. Xiong, Raman spectroscopy of atomically thin two-dimensional magnetic iron phosphorus trisulfide (FePS3) crystals. 2D Materials 3, 031009 (2016)CrossRef
106.
J.U. Lee, S. Lee, J.H. Ryoo, S. Kang, T.Y. Kim, P. Kim, C.H. Park, J.G. Park, H. Cheong, Ising-type magnetic ordering in atomically thin FePS3. Nano Lett. 16, 7433–7438 (2016)CrossRef
107.
T. Sekine, M. Jouanne, C. Julien, M. Balkanski, Light-scattering study of dynamic behavior of antiferromagnetic spins in the layered magnetic semiconductor FePS3. Phys. Rev. B 42, 8382–8393 (1990)CrossRef
Metadata
Title
Raman Spectroscopy of Isotropic Two-Dimensional Materials Beyond Graphene
Authors
Xin Lu
Qing-Hai Tan
Qihua Xiong
Jun Zhang
Copyright Year
2019
Publisher
Springer Singapore
Book
Raman Spectroscopy of Two-Dimensional Materials

Print ISBN: 978-981-13-1827-6

Electronic ISBN: 978-981-13-1828-3

Copyright Year: 2019

DOI
https://doi.org/10.1007/978-981-13-1828-3_2

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