Skip to main content
Top

2019 | OriginalPaper | Chapter

6. Raman Spectroscopy Study of Two-Dimensional Materials Under Strain

Authors : Chunxiao Cong, Yanlong Wang, Ting Yu

Published in: Raman Spectroscopy of Two-Dimensional Materials

Publisher: Springer Singapore

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The exceptionally high stretchability of atomically thin materials enables extensive manipulation of their properties and exploration of rich physics through the application of external strain. Therefore, it is important to understand strain effects on two-dimensional materials both for fundamental studies and developing various applications, especially in flexible and wearable devices. In this chapter, we will give several examples of how Raman spectroscopy can be utilized to investigate the strain effects on fundamental properties of atomically thin materials.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004)CrossRef K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004)CrossRef
2.
go back to reference M. Dresselhaus, A. Jorio, R. Saito, Characterizing graphene, graphite, and carbon nanotubes by Raman spectroscopy. Annu. Rev. Condens. Matter Phys. 1, 89–108 (2010)CrossRef M. Dresselhaus, A. Jorio, R. Saito, Characterizing graphene, graphite, and carbon nanotubes by Raman spectroscopy. Annu. Rev. Condens. Matter Phys. 1, 89–108 (2010)CrossRef
3.
go back to reference A.C. Ferrari, D.M. Basko, Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 8, 235–246 (2013)CrossRef A.C. Ferrari, D.M. Basko, Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 8, 235–246 (2013)CrossRef
4.
go back to reference R. Saito, M. Hofmann, G. Dresselhaus, A. Jorio, M. Dresselhaus, Raman spectroscopy of graphene and carbon nanotubes. Adv. Phys. 60, 413–550 (2011)CrossRef R. Saito, M. Hofmann, G. Dresselhaus, A. Jorio, M. Dresselhaus, Raman spectroscopy of graphene and carbon nanotubes. Adv. Phys. 60, 413–550 (2011)CrossRef
5.
go back to reference C. Cong, T. Yu, K. Sato, J. Shang, R. Saito, G.F. Dresselhaus, M.S. Dresselhaus, Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5, 8760–8768 (2011)CrossRef C. Cong, T. Yu, K. Sato, J. Shang, R. Saito, G.F. Dresselhaus, M.S. Dresselhaus, Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5, 8760–8768 (2011)CrossRef
6.
go back to reference L.M. Malard, D.L. Mafra, S.K. Doorn, M.A. Pimenta, Resonance Raman scattering in graphene: probing phonons and electrons. Solid State Commun. 149, 1136–1139 (2009)CrossRef L.M. Malard, D.L. Mafra, S.K. Doorn, M.A. Pimenta, Resonance Raman scattering in graphene: probing phonons and electrons. Solid State Commun. 149, 1136–1139 (2009)CrossRef
7.
go back to reference L.M. Malard, M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, Raman spectroscopy in graphene. Phys. Rep. 473, 51–87 (2009)CrossRef L.M. Malard, M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, Raman spectroscopy in graphene. Phys. Rep. 473, 51–87 (2009)CrossRef
8.
go back to reference J. Yan, Y. Zhang, P. Kim, A. Pinczuk, Electric field effect tuning of electron-phonon coupling in graphene. Phys. Rev. Lett. 98, 166802-1–166802-4 (2007) J. Yan, Y. Zhang, P. Kim, A. Pinczuk, Electric field effect tuning of electron-phonon coupling in graphene. Phys. Rev. Lett. 98, 166802-1–166802-4 (2007)
9.
go back to reference K. Kang, D. Abdula, D.G. Cahill, M. Shim, Lifetimes of optical phonons in graphene and graphite by time-resolved incoherent anti-Stokes Raman scattering. Phys. Rev. B 81, 165405-1–165405-6 (2010) K. Kang, D. Abdula, D.G. Cahill, M. Shim, Lifetimes of optical phonons in graphene and graphite by time-resolved incoherent anti-Stokes Raman scattering. Phys. Rev. B 81, 165405-1–165405-6 (2010)
10.
go back to reference A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S.K. Saha, U.V. Waghmare, K.S. Novoselov, H.R. Krishnamurthy, A.K. Geim, A.C. Ferrari, A.K. Sood, Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210–215 (2008)CrossRef A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S.K. Saha, U.V. Waghmare, K.S. Novoselov, H.R. Krishnamurthy, A.K. Geim, A.C. Ferrari, A.K. Sood, Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210–215 (2008)CrossRef
11.
go back to reference L. Cançado, M. Pimenta, R. Saito, A. Jorio, L. Ladeira, A. Grueneis, A. Souza-Filho, G. Dresselhaus, M. Dresselhaus, Stokes and anti-stokes double resonance Raman scattering in two-dimensional graphite. Phys. Rev. B 66, 035415 (2002)CrossRef L. Cançado, M. Pimenta, R. Saito, A. Jorio, L. Ladeira, A. Grueneis, A. Souza-Filho, G. Dresselhaus, M. Dresselhaus, Stokes and anti-stokes double resonance Raman scattering in two-dimensional graphite. Phys. Rev. B 66, 035415 (2002)CrossRef
12.
go back to reference Y.M. You, Z.H. Ni, T. Yu, Z.X. Shen, Edge chirality determination of graphene by Raman spectroscopy. Appl. Phys. Lett. 93, 163112-1–163112-3 (2008) Y.M. You, Z.H. Ni, T. Yu, Z.X. Shen, Edge chirality determination of graphene by Raman spectroscopy. Appl. Phys. Lett. 93, 163112-1–163112-3 (2008)
13.
go back to reference C. Cong, T. Yu, H. Wang, Raman study on the G mode of graphene for determination of edge orientation. ACS Nano 4, 3175–3180 (2010)CrossRef C. Cong, T. Yu, H. Wang, Raman study on the G mode of graphene for determination of edge orientation. ACS Nano 4, 3175–3180 (2010)CrossRef
14.
go back to reference T. Yu, Z. Ni, C. Du, Y. You, Y. Wang, Z. Shen, Raman mapping investigation of graphene on transparent flexible substrate: the strain effect. J. Phys. Chem. C 112, 12602–12605 (2008)CrossRef T. Yu, Z. Ni, C. Du, Y. You, Y. Wang, Z. Shen, Raman mapping investigation of graphene on transparent flexible substrate: the strain effect. J. Phys. Chem. C 112, 12602–12605 (2008)CrossRef
15.
go back to reference Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2, 2301–2305 (2008)CrossRef Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2, 2301–2305 (2008)CrossRef
16.
go back to reference C.A. Cooper, R.J. Young, Investigation of structure/property relationships in particulate composites through the use of Raman spectroscopy. J. Raman Spectrosc. 30, 929–938 (1999)CrossRef C.A. Cooper, R.J. Young, Investigation of structure/property relationships in particulate composites through the use of Raman spectroscopy. J. Raman Spectrosc. 30, 929–938 (1999)CrossRef
17.
go back to reference T. Mohiuddin, A. Lombardo, R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. Basko, C. Galiotis, N. Marzari, Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation. Phys. Rev. B 79, 205433-1–205433-8 (2009)CrossRef T. Mohiuddin, A. Lombardo, R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. Basko, C. Galiotis, N. Marzari, Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation. Phys. Rev. B 79, 205433-1–205433-8 (2009)CrossRef
18.
go back to reference M. Huang, H. Yan, C. Chen, D. Song, T.F. Heinz, J. Hone, Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy. Proc. Natl. Acad. Sci. U. S. A 106, 7304–7308 (2009)CrossRef M. Huang, H. Yan, C. Chen, D. Song, T.F. Heinz, J. Hone, Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy. Proc. Natl. Acad. Sci. U. S. A 106, 7304–7308 (2009)CrossRef
19.
go back to reference B. Kelly, Physics of graphite (Applied Science, London, 1981), p. 477 B. Kelly, Physics of graphite (Applied Science, London, 1981), p. 477
20.
go back to reference D. Yoon, Y.-W. Son, H. Cheong, Strain-dependent splitting of the double-resonance Raman scattering band in graphene. Phys. Rev. Lett. 106, 155502-1–155502-4 (2011) D. Yoon, Y.-W. Son, H. Cheong, Strain-dependent splitting of the double-resonance Raman scattering band in graphene. Phys. Rev. Lett. 106, 155502-1–155502-4 (2011)
21.
go back to reference K. Mak, C. Lee, J. Hone, J. Shan, T. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805-1–136805-4 (2010)CrossRef K. Mak, C. Lee, J. Hone, J. Shan, T. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805-1–136805-4 (2010)CrossRef
22.
go back to reference A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010)CrossRef A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010)CrossRef
23.
go back to reference W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, G. Eda, Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 7, 791–797 (2012)CrossRef W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, G. Eda, Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 7, 791–797 (2012)CrossRef
24.
go back to reference B. Radisavljevic, M.B. Whitwick, A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011)CrossRef B. Radisavljevic, M.B. Whitwick, A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011)CrossRef
25.
go back to reference B. Radisavljevic, J. Brivio, V. Giacometti, A. Kis, A. Radenovic, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011)CrossRef B. Radisavljevic, J. Brivio, V. Giacometti, A. Kis, A. Radenovic, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011)CrossRef
26.
go back to reference R.C. Cooper, C. Lee, C.A. Marianetti, X. Wei, J. Hone, J.W. Kysar, Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 87, 035423-1–035423-11 (2013) R.C. Cooper, C. Lee, C.A. Marianetti, X. Wei, J. Hone, J.W. Kysar, Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 87, 035423-1–035423-11 (2013)
27.
go back to reference S. Bertolazzi, J. Brivio, A. Kis, Stretching and breaking of ultrathin MoS2. ACS Nano 5, 9703–9709 (2011)CrossRef S. Bertolazzi, J. Brivio, A. Kis, Stretching and breaking of ultrathin MoS2. ACS Nano 5, 9703–9709 (2011)CrossRef
28.
go back to reference Y. Wang, C. Cong, C. Qiu, T. Yu, Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 9, 2857–2861 (2013)CrossRef Y. Wang, C. Cong, C. Qiu, T. Yu, Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 9, 2857–2861 (2013)CrossRef
29.
go back to reference Y. Wang, C. Cong, W. Yang, J. Shang, N. Peimyoo, Y. Chen, J. Kang, J. Wang, W. Huang, T. Yu, Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2. Nano Res. 8, 2562–2572 (2015)CrossRef Y. Wang, C. Cong, W. Yang, J. Shang, N. Peimyoo, Y. Chen, J. Kang, J. Wang, W. Huang, T. Yu, Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2. Nano Res. 8, 2562–2572 (2015)CrossRef
30.
go back to reference H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund Jr., S.T. Pantelides, K.I. Bolotin, Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626–3630 (2013)CrossRef H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund Jr., S.T. Pantelides, K.I. Bolotin, Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626–3630 (2013)CrossRef
31.
go back to reference H.-X. Zhong, S. Gao, J.-J. Shi, L. Yang, Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2 and ReSe2. Phys. Rev. B 92, 115438-1–115438-7 (2015)CrossRef H.-X. Zhong, S. Gao, J.-J. Shi, L. Yang, Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2 and ReSe2. Phys. Rev. B 92, 115438-1–115438-7 (2015)CrossRef
32.
go back to reference H. Zhao, J. Wu, H. Zhong, Q. Guo, X. Wang, F. Xia, L. Yang, P. Tan, H. Wang, Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res. 8, 3651–3661 (2015)CrossRef H. Zhao, J. Wu, H. Zhong, Q. Guo, X. Wang, F. Xia, L. Yang, P. Tan, H. Wang, Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res. 8, 3651–3661 (2015)CrossRef
33.
go back to reference S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S.S. Li, A. Suslu, F.M. Peeters, Q. Liu, J. Li, S. Tongay, Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering. Nano Lett. 15, 1660–1666 (2015)CrossRef S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S.S. Li, A. Suslu, F.M. Peeters, Q. Liu, J. Li, S. Tongay, Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering. Nano Lett. 15, 1660–1666 (2015)CrossRef
34.
go back to reference A. Castellanos-Gomez, L. Vicarelli, E. Prada, J.O. Island, K.L. Narasimha-Acharya, S.I. Blanter, D.J. Groenendijk, M. Buscema, G.A. Steele, J.V. Alvarez, H.W. Zandbergen, J.J. Palacios, H.S.J. van der Zant, Isolation and characterization of few-layer black phosphorus. 2D Mater 1, 025001 (2014)CrossRef A. Castellanos-Gomez, L. Vicarelli, E. Prada, J.O. Island, K.L. Narasimha-Acharya, S.I. Blanter, D.J. Groenendijk, M. Buscema, G.A. Steele, J.V. Alvarez, H.W. Zandbergen, J.J. Palacios, H.S.J. van der Zant, Isolation and characterization of few-layer black phosphorus. 2D Mater 1, 025001 (2014)CrossRef
35.
go back to reference X. Ling, H. Wang, S. Huang, F. Xia, M.S. Dresselhaus, The renaissance of black phosphorus. Proc. Natl. Acad. Sci. 112, 4523–4530 (2015)CrossRef X. Ling, H. Wang, S. Huang, F. Xia, M.S. Dresselhaus, The renaissance of black phosphorus. Proc. Natl. Acad. Sci. 112, 4523–4530 (2015)CrossRef
36.
go back to reference G. Qin, Q.-B. Yan, Z. Qin, S.-Y. Yue, M. Hu, G. Su, Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles. Phys. Chem. Chem. Phys. 17, 4854–4858 (2015)CrossRef G. Qin, Q.-B. Yan, Z. Qin, S.-Y. Yue, M. Hu, G. Su, Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles. Phys. Chem. Chem. Phys. 17, 4854–4858 (2015)CrossRef
37.
go back to reference J. Qiao, X. Kong, Z.-X. Hu, F. Yang, W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014)CrossRef J. Qiao, X. Kong, Z.-X. Hu, F. Yang, W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014)CrossRef
38.
go back to reference J. Wu, N. Mao, L. Xie, H. Xu, J. Zhang, Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem. Int. Ed. 54, 2366–2369 (2015)CrossRef J. Wu, N. Mao, L. Xie, H. Xu, J. Zhang, Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem. Int. Ed. 54, 2366–2369 (2015)CrossRef
39.
go back to reference F. Xia, H. Wang, Y. Jia, Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014)CrossRef F. Xia, H. Wang, Y. Jia, Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014)CrossRef
40.
go back to reference A. Jain, A.J. McGaughey, Strongly anisotropic in-plane thermal transport in single-layer black phosphorene. Sci. Rep. 5, 8501 (2015)CrossRef A. Jain, A.J. McGaughey, Strongly anisotropic in-plane thermal transport in single-layer black phosphorene. Sci. Rep. 5, 8501 (2015)CrossRef
41.
go back to reference H.B. Ribeiro, M.A. Pimenta, C.J.S. de Matos, R.L. Moreira, A.S. Rodin, J.D. Zapata, E.A.T. de Souza, A.H. Castro Neto, Unusual angular dependence of the Raman response in black phosphorus. ACS Nano 9, 4270–4276 (2015)CrossRef H.B. Ribeiro, M.A. Pimenta, C.J.S. de Matos, R.L. Moreira, A.S. Rodin, J.D. Zapata, E.A.T. de Souza, A.H. Castro Neto, Unusual angular dependence of the Raman response in black phosphorus. ACS Nano 9, 4270–4276 (2015)CrossRef
42.
go back to reference Y. Wang, C. Cong, R. Fei, W. Yang, Y. Chen, B. Cao, L. Yang, T. Yu, Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus. Nano Res. 8, 3944–3953 (2015)CrossRef Y. Wang, C. Cong, R. Fei, W. Yang, Y. Chen, B. Cao, L. Yang, T. Yu, Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus. Nano Res. 8, 3944–3953 (2015)CrossRef
43.
go back to reference I. Stenger, L. Schué, M. Boukhicha, B. Berini, B. Plaçais, A. Loiseau, J. Barjon, Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals. 2D Mater 4, 031003 (2017)CrossRef I. Stenger, L. Schué, M. Boukhicha, B. Berini, B. Plaçais, A. Loiseau, J. Barjon, Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals. 2D Mater 4, 031003 (2017)CrossRef
44.
go back to reference A. Falin, Q. Cai, E.J.G. Santos, D. Scullion, D. Qian, R. Zhang, Z. Yang, S. Huang, K. Watanabe, T. Taniguchi, M.R. Barnett, Y. Chen, R.S. Ruoff, L.H. Li, Mechanical properties of atomically thin boron nitride and the role of interlayer interactions. Nat. Commun. 8, 15815 (2017)CrossRef A. Falin, Q. Cai, E.J.G. Santos, D. Scullion, D. Qian, R. Zhang, Z. Yang, S. Huang, K. Watanabe, T. Taniguchi, M.R. Barnett, Y. Chen, R.S. Ruoff, L.H. Li, Mechanical properties of atomically thin boron nitride and the role of interlayer interactions. Nat. Commun. 8, 15815 (2017)CrossRef
45.
go back to reference R.V. Gorbachev, I. Riaz, R.R. Nair, R. Jalil, L. Britnell, B.D. Belle, E.W. Hill, K.S. Novoselov, K. Watanabe, T. Taniguchi, A.K. Geim, P. Blake, Hunting for monolayer boron nitride: optical and Raman signatures. Small 7, 465–468 (2011)CrossRef R.V. Gorbachev, I. Riaz, R.R. Nair, R. Jalil, L. Britnell, B.D. Belle, E.W. Hill, K.S. Novoselov, K. Watanabe, T. Taniguchi, A.K. Geim, P. Blake, Hunting for monolayer boron nitride: optical and Raman signatures. Small 7, 465–468 (2011)CrossRef
46.
go back to reference R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau, Raman spectroscopy of single-wall boron nitride nanotubes. Nano Lett. 6, 1812–1816 (2006)CrossRef R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau, Raman spectroscopy of single-wall boron nitride nanotubes. Nano Lett. 6, 1812–1816 (2006)CrossRef
Metadata
Title
Raman Spectroscopy Study of Two-Dimensional Materials Under Strain
Authors
Chunxiao Cong
Yanlong Wang
Ting Yu
Copyright Year
2019
Publisher
Springer Singapore
DOI
https://doi.org/10.1007/978-981-13-1828-3_6

Premium Partners