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3D-Printed Sensor Array of Semiconducting Oxides Read chapter Read first chapter

2020 | OriginalPaper | Chapter

Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals

Author : A. V. Tiron

Published in: 4th International Conference on Nanotechnologies and Biomedical Engineering

Publisher: Springer International Publishing

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Abstract

The low-temperature transmission and wavelength modulated transmission spectra of TlGaSe2 crystals with a thickness of 7, 5.7, 4.7 μm were measured. Refractive index was calculated from interference observed in transmission spectra. The spectral dependences of the normal dispersion na (E║a) and nв (E║в) and Δn = na (E║a) − nв (E║в) on the long-wavelength and short-wave side of the ground states A, B and C of excitons are determined.

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Literature
1.
Muller, D., Hahn, H.: Untersuchungen uberternare Chalkogenide. XXIV Zur Struktur des TlGaSe2. Zeitschrift fUr anor- ganische und allgemeine Chemie 432, 258 (1978)CrossRef
2.
Range, K.J., Maheberd, G., Obenland, S.: High pressure phases of TlAlSe2 and TlGaSe2 with TISe-type Structure. Zeitschrift fiir Naturforschung, 32a, 1354 (1977)
3.
Mustafaeva, S.N., Kerimova, E.M., Gasanov, N.Z.: Exciton characteristics of intercalated TIGaSe2 single crystal. Semiconductors 32(2), 145 (1998)CrossRef
Metadata
Title
Refractive Index in the Region of Excitonic Resonances in TlGaSe2 Crystals
Author
A. V. Tiron
Copyright Year
2020
Book
4th International Conference on Nanotechnologies and Biomedical Engineering

Print ISBN: 978-3-030-31865-9

Electronic ISBN: 978-3-030-31866-6

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-3-030-31866-6_16