Semiconductor Properties of ZnTe Thin Films Electrodeposited from Aqueous Solutions

ZnTe compound semiconductor thin films have been synthesized using an electrodeposition process from an acidic aqueous solution. The film thickness of electrodeposited ZnTe is around 3 µm, and the growth rate is ca. 3 nm sec-1. Optical absorption of ZnTe thin films has been observed in the wavelength range less than 559 nm. The band gap energy of annealed ZnTe thin films is ca. 2.3 eV, which is close to the value of ZnTe bulk single crystal. Electrical Resistivity of ZnTe thin films has been measured using a sample exfoliated from a conductive ITO coated glass electrode. The resistivity of as-deposited ZnTe thin films is ca. 106 Ωm, whereas the resistivity of annealed ZnTe thin films is around 104 Ωm, which is lower than the value of ZnTe bulk single crystal.