Issue 10/2016
Content (24 Articles)
Energy spectrum of charge carriers in TlIn1–x Yb x Te2 solid solutions
F. F. Aliev, U. M. Agaeva, M. M. Zarbaliev
First-principles calculations of the electronic and structural properties of GaSb
E.-E. Castaño-González, N. Seña, V. Mendoza-Estrada, R. González-Hernández, A. Dussan, F. Mesa
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals
O. I. Podkopaev, A. F. Shimanskiy, S. A. Kopytkova, R. A. Filatov, N. O. Golubovskaya
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm
A. V. Babichev, A. Bousseksou, N. A. Pikhtin, I. S. Tarasov, E. V. Nikitina, A. N. Sofronov, D. A. Firsov, L. E. Vorobjev, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities
M. M. Mezdrogina, A. Ya. Vinogradov, R. V. Kuzmin, V. S. Levitski, Yu. V. Kozanova, N. V. Lyanguzov, M. V. Chukichev
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov
Reflectance of a PbSb2Te4 crystal in a wide spectral range
S. A. Nemov, Yu. V. Ulashkevich, A. V. Povolotskii, I. I. Khlamov
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. V. Senkovskiy
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emel’yanov, M. V. Dubina
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnyi, N. Kh. Timoshina, V. M. Andreev
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells
G. F. Novikov, Wei-Tao Tsai, K. V. Bocharov, E. V. Rabenok, Ming-Jer Jeng, Liann-Be Chang, Wu-Shiung Feng, Jian-Ping Ao, Yun Sun
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
A. M. Musaev
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C)
V. M. Andreev, D. A. Malevskiy, P. V. Pokrovskiy, V. D. Rumyantsev, A. V. Chekalin
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov, A. E. Zhukov
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen
N. I. Bochkareva, I. A. Sheremet, Yu. G. Shreter
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
A. F. Tsatsulnikov, V. W. Lundin, E. E. Zavarin, M. A. Yagovkina, A. V. Sakharov, S. O. Usov, V. E. Zemlyakov, V. I. Egorkin, K. A. Bulashevich, S. Yu. Karpov, V. M. Ustinov
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
M. A. Bobrov, N. A. Maleev, S. A. Blokhin, A. G. Kuzmenkov, A. P. Vasil’ev, A. A. Blokhin, Yu. A. Guseva, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, V. Lysak, V. M. Ustinov
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)
D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev, Yu. P. Yakovlev
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
F. I. Zubov, N. V. Kryzhanovskaya, E. I. Moiseev, Yu. S. Polubavkina, O. I. Simchuk, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, A. A. Lipovskii, M. V. Maximov, A. E. Zhukov
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bougrov, A. S. Kurochkin, A. G. Gladyshev, A. V. Babichev, I. M. Gadzhiev, M. S. Buyalo, Yu. M. Zadiranov, A. A. Usikova, Yu. M. Shernyakov, A. V. Savelyev, I. A. Nyapshaev, A. Yu. Egorov
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev