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Semiconductors

Issue 5/2020

Content (15 Articles)

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Photoluminescence of (Zn, Pb, Mn)S Quantum Dots in Polyacrylate Matrix

A. A. Isaeva, V. P. Smagin

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect

A. A. Shiryaev, V. M. Vorotyntsev, E. L. Shobolov

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Low-Dimensional Silicon-Carbide Structures: Analytical Estimates of Electron-Spectrum Characteristics

S. Yu. Davydov

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov, N. A. Pikhtin

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System

H. Trir, L. Radjehi, N. Sengouga, T. Tibermacine, L. Arab, W. Filali, D. Abdelkader, N. Attaf

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram

M. A. Botzakaki, G. Skoulatakis, G. P. Papageorgiou, C. A. Krontiras

SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure

M. Sailai, A. Aierken, L. Qiqi, M. Heini, X. Zhao, J. Mo, Guo Jie, R. Hao, Z. Yu, G. Qi

AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS

Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Y. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov

PHYSICS OF SEMICONDUCTOR DEVICES

Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov

PHYSICS OF SEMICONDUCTOR DEVICES

S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities

A. G. Tandoev, T. T. Mnatsakanov, S. N. Yurkov

PHYSICS OF SEMICONDUCTOR DEVICES

Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure

O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko, A. A. Podoskin

PHYSICS OF SEMICONDUCTOR DEVICES

Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsentyev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES

Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon

V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva, V. E. Roslikov

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