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Optical and Quantum Electronics

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01-12-2018

Signature of the ideality factor in III-nitride multi quantum well light emitting diodes

Authors: Friedhard Römer, Bernd Witzigmann

Published in: Optical and Quantum Electronics | Issue 12/2018

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Abstract

The ideality factor in recent III-nitride light emitting diodes (LED) is expected to approach values close to \(\eta \approx 1\) near the maximum of the internal quantum efficiency (IQE) because the bimolecular recombination dominates there. However, the electrical characterisation of multi quantum well (MQW) LEDs often yields values which are more close to \(\eta \approx 2\) or even more. To analyse the effect of the MQW on the ideality factor we derive an electrical model based on lumped circuit elements. By comparing the model results with the physical simulations of the ideality factor we demonstrate its validity. The detailed analysis of the circuit elements reveals that the electron scattering has a major impact on the ideality factor near the maximum of the IQE. We show that the ideality factor presents a signature for the hole injection efficiency and thus can be used to estimate the IQE characteristic in the high current regime.

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Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., Schaff, B., Eastman, L.F.: Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J. Phys. Condens. Matter 14(13), 3399–3434 (2002). https://doi.org/10.1088/0953-8984/14/13/302 ADSCrossRef

Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.: Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes. Appl. Phys. Lett. 105(13), 133504 (2014). https://doi.org/10.1063/1.4896970 ADSCrossRef

Baraff, G.: Semiclassical description of electron transport in semiconductor quantum-well devices. Phys. Rev. B 55(16), 10745–10753 (1997)ADSCrossRef

Binder, M., Galler, B., Furitsch, M., Off, J., Wagner, J., Zeisel, R., Katz, S.: Investigations on correlation between IV characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes. Appl. Phys. Lett. 103(22), 221110 (2013). https://doi.org/10.1063/1.4833895 ADSCrossRef

Brochen, S., Brault, J., Chenot, S., Dussaigne, A., Leroux, M., Damilano, B.: Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy. Appl. Phys. Lett. 103(3), 032102 (2013). https://doi.org/10.1063/1.4813598 ADSCrossRef

Cho, J., Schubert, E.F., Kim, J.K.: Efficiency droop in light-emitting diodes: challenges and countermeasures. Laser. Photon. Rev. 7(3), 408–421 (2013). https://doi.org/10.1002/lpor.201200025 ADSCrossRef

David A., Hurni C.A., Young N.G., Craven M.D.: Electrical properties of III-nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling. Appl. Phys. Lett. 109(8), 083501 (2016). https://doi.org/10.1063/1.4961491 ADSCrossRef

Ferry, D., Ramey, S., Shifren, L., Akis, R.: The effective potential in device modeling: the good, the bad and the ugly. J. Comput. Electron. 1(1/2), 59–65 (2002). https://doi.org/10.1023/A:1020763710906 CrossRef

Galler, B., Laubsch, A., Wojcik, A., Lugauer, H., Gomez-Iglesias, A., Sabathil, M., Hahn, B.: Investigation of the carrier distribution in InGaN-based multi-quantum-well structures. Phys. Status Solidi C 8(7–8), 2372–2374 (2011). https://doi.org/10.1002/pssc.201001075 ADSCrossRef

Grupen, M., Hess, K.: Simulation of carrier transport and nonlinearities in quantum-well laser diodes. IEEE J. Quantum Electron. 34(1), 120–140 (1998). https://doi.org/10.1109/3.655016 ADSCrossRef

Han, D.P., Shim, J.-I., Shin, D.S., Kim, K.S.: Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes. Appl. Phys. Express 9(8), 081002 (2016). https://doi.org/10.7567/APEX.9.081002 ADSCrossRef

Kioupakis, E., Yan, Q., Van de Walle, C.G.: Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Appl. Phys. Lett. 101(23), 231107 (2012). https://doi.org/10.1063/1.4769374 ADSCrossRef

Masui, H.: Diode ideality factor in modern light-emitting diodes. Semicond. Sci. Technol. 26(7), 075011 (2011). https://doi.org/10.1088/0268-1242/26/7/075011 ADSCrossRef

Okada, N., Tadatomo, K., Yamane, K., Mangyo, H., Kobayashi, Y., Ono, H., Ikenaga, K., Yano, Y., Matsumoto, K.: Performance of InGaN/GaN light-emitting diodes grown using NH3 with oxygen-containing impurities with oxygen-containing impurities. Jpn. J. Appl. Phys. 53(8), 081001 (2014). https://doi.org/10.7567/Jjap.53.081001 ADSCrossRef

Park, S.H., Chuang, S.L.: Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors. Phys. Rev. B 59(7), 4725–4737 (1999). https://doi.org/10.1103/PhysRevB.59.4725 ADSCrossRef

Piprek, J., Li, Z.M.S.: Sensitivity analysis of electron leakage in III-nitride light-emitting diodes. Appl. Phys. Lett. 102(13), 131103 (2013). https://doi.org/10.1063/1.4799672 ADSCrossRef

Römer, F., Witzigmann, B.: Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs. Opt. Express 22(S6), A1440–A1452 (2014). https://doi.org/10.1364/OE.22.0A1440 ADSCrossRef

Römer, F., Witzigmann, B.: Effect of oxygen impurities in semipolar III-nitride light emitting diodes. Phys. Status Solidi A 214(1), 1600297 (2017a). https://doi.org/10.1002/pssa.201600297 ADSCrossRef

Römer, F., Witzigmann, B.: Luminescence distribution in the multi-quantum well region of III-nitride light emitting diodes. In: Proceedings of SPIE, vol. 10124, p. 101240Y (2017b). https://doi.org/10.1117/12.2253668

Sabathil, M., Laubsch, A., Linder, N.: Self-consistent modeling of resonant PL in InGaN SQW LED-structure. In: Proceedings of SPIE, vol. 6486, p. 64860V (2007). https://doi.org/10.1117/12.700461

Shedbalkar, A., Andreev, Z., Witzigmann, B.: Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green’s function method. Phys. Status Solidi B 253(1), 158–163 (2016). https://doi.org/10.1002/pssb.201552276 ADSCrossRef

Sun, W., Tan, C.K., Tansu, N.: III-Nitride digital alloy: electronics and optoelectronics properties of the InN/GaN ultra-short period superlattice nanostructures. Sci. Rep. 7(1), 6671 (2017). https://doi.org/10.1038/s41598-017-06889-3 ADSCrossRef

Xu, J., Schubert, M.F., Noemaun, A.N., Kim, J.K., Schubert, E.F., Kim, M.H., Chung, H.J., Yoon, S., Sone, C., Park, Y.: Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes. Appl. Phys. Lett. 94(1), 011113 (2009). https://doi.org/10.1063/1.3058687 ADSCrossRef

Zakheim, D.A., Pavluchenko, A.S., Bauman, D.A., Bulashevich, K.A., Khokhlev, O.V., Karpov, S.Y.: Efficiency droop suppression in InGaN-based blue LEDs: experiment and numerical modelling. Phys. Status Solidi A 209(3), 456–460 (2012). https://doi.org/10.1002/pssa.201100317 ADSCrossRef

Zhu, D., Xu, J., Noemaun, A.N., Kim, J.K., Schubert, E.F., Crawford, M.H., Koleske, D.D.: The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes. Appl. Phys. Lett. 94(8), 081113 (2009). https://doi.org/10.1063/1.3089687 ADSCrossRef

Title: Signature of the ideality factor in III-nitride multi quantum well light emitting diodes
Authors: Friedhard Römer
Bernd Witzigmann
Publication date: 01-12-2018
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 12/2018
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-017-1264-4

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