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Optical and Quantum Electronics

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01-07-2013

Simulation of resonant tunneling devices: origin of the \(I\)–\(V\) multi-peak behavior

Authors: J. Wen, L. Li, Q. C. Weng, D. Y. Xiong

Published in: Optical and Quantum Electronics | Issue 7/2013

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Abstract

Multi-peak behavior of the \(I\)–\(V\) curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs quantum dots (QDs) is simulated. Our simulation results show that the coupling between the energy level in the emitter quantum well (quantum dot) layer and that in the central quantum well is the key point in understanding the origin of the \(I\)–\(V\) multi-peak behavior. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the \(I\)–\(V\) characteristics are also obtained. Our results provide the physical basis for understanding and utilizing the multi-peak behavior of \(I\)–\(V\) curves in designing resonant tunneling devices.

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Blakesley, J.C., See, P., Shields, A.J., Kardynał, B.E., Atkinson, P., Farrer, I., Ritchie, D.A.: Efficient single photon detection by quantum dot resonant tunneling diodes. Phys. Rev. Lett. 94, 067401 (2005)ADSCrossRef

Buller, G.S., Collins, R.J.: Single-photon generation and detection. Meas. Sci. Technol. 21, 012002 (2010)ADSCrossRef

Buot, F.A., Jensen, K.L.: Intrinsic high-frequency oscillations and equivalent circuit model in the negative differential resistance region of resonant tunneling devices. COMPEL 10, 241–253 (2007)CrossRef

Chang, L.L., Esaki, L., Tsu, R.: Resonant tunneling in semiconductor double barriers. Appl. Phys. Lett. 24, 593–595 (1974)ADSCrossRef

Dai, Z.H., Ni, J., Sun, Y.M., Wang, W.T.: Dynamical behavior of electron transport in AlGaAs/GaAs double-barrier structures under a high-frequency radiation field. Eur. Phys. J. B 60, 439–446 (2007)ADSCrossRef

Kluksdahl, N.C., Kriman, A.M., Ferry, D.K.: Self-consistent study of the resonant-tunneling diode. Phys. Rev. B 39, 7720–7735 (1989)ADSCrossRef

Leheny, R.F., McCants, C.E.: Technologies for photonic sensor systems. Proc. IEEE 97(6), 957–970 (2009)CrossRef

Li, H.W., Kardynał, B.E., See, P., Shields, A.J., Simmonds, P., Beere, H.E., Ritchie, D.A.: Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection. Appl. Phys. Lett. 91, 073516 (2007)ADSCrossRef

Lin, L., Zhen, H.L., Li, N., Lu, W., Weng, Q.C., Xiong, D.Y., Liu, F.Q.: Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors. Appl. Phys. Lett. 97, 193511 (2010)ADSCrossRef

Mukherjee, K., Das, N.R.: Tunneling current calculations for nonuniform and asymmetric multiple quantum well structures. J. Appl. Phys. 109, 053708 (2011)ADSCrossRef

Pioda, A., Totoki, E., Kiyama, H., Fujita, T., Allison, G., Asayama, T., Oiwa, A., Tarucha, S.: Single-shot detection of electrons generated by individual photons. Phys. Rev. Lett. 106, 146804 (2011)ADSCrossRef

Shen, S.C.: Comparison and competition between MCT and QW structure material for use in IR detectors. Microelectron. J. 25, 713–739 (1994)CrossRef

Sofo, J.O., Balseiro, C.A.: Intrinsic bistability in resonant-tunneling structures. Phys. Rev. B 42, 7292 (1990)ADSCrossRef

Vdovin, E.E., Makarovsky, O., Patanè, A., Eaves, L., Khanin, YuN: Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot. Phys. Rev. B 79, 193311 (2009)ADSCrossRef

Wang, W.P., Hou, Y., Xiong, D.Y., Li, N., Lu, W., Wang, W.X., et al.: High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode. Appl. Phys. Lett. 92, 023508 (2008)ADSCrossRef

Wang, W.P., Hou, Y., Li, N., Li, Z.F., Chen, X.S., Lu, W., Wang, W.X., et al.: Field effect enhanced quantum dot resonant tunneling diode for high dynamic range light detection. Appl. Phys. Lett. 94, 093511 (2009)ADSCrossRef

Worschech, L., Reitzenstein, S., Forchel, A.: Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures. Appl. Phys. Lett. 77, 3662–3664 (2000)ADSCrossRef

Xia, H., Lu, Z.Y., Li, T.X., Parkinson, P., Liao, Z.M., Liu, F.H., Lu, W., Hu, W.D., Chen, P.P., et al.: Distinct photocurrent response of individual GaAs nanowires induced by n-Type doping. ACS Nano 6(7), 6005–6013 (2012)CrossRef

Zhao, P.J., Cui, H.L., Woolard, D., Jensen, K.L., Buot, F.A.: Simulation of resonant tunneling structures: origin of the I–V hysteresis and plateau-like structure. J. Appl. Phys. 87, 1337–1349 (2000)ADSCrossRef

Title: Simulation of resonant tunneling devices: origin of the – multi-peak behavior
Authors: J. Wen
L. Li
Q. C. Weng
D. Y. Xiong
Publication date: 01-07-2013
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 7/2013
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-013-9678-0

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