Skip to main content
Top
Published in: Journal of Materials Science 10/2012

01-05-2012

Spark plasma sintering of a p-type Si1−x Ge x alloy: identification of the densification mechanism by isothermal and anisothermal methods

Authors: Guillaume Bernard-Granger, Amandine Néri, Christelle Navone, Mathieu Soulier, Julia Simon, Maya Marinova-Atanassova

Published in: Journal of Materials Science | Issue 10/2012

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Spark plasma sintering of a p-type Si0.795Ge0.200B0.005 alloy has been investigated in vacuum, in the 400–1200 °C temperature range. The densification mechanism has been determined using isothermal and anisothermal methods. In spite of a slight material degradation for the highest sintering temperatures (occurrence of cristobalite nodules homogeneously dispersed in intergranular and intragranular positions), it is proposed that densification proceeds by grain boundary sliding accommodated most probably by silicon volume diffusion. The microstructure observation of several sintered samples using transmission electron microscopy supports the densification mechanism advanced. Because the elemental grains remain mostly equiaxe whatever the sintering conditions, a grain intercalation mechanism may be also implicated during densification.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference Godard C (2010) Les Techniques de l’Ingénieur N1 500:1 Godard C (2010) Les Techniques de l’Ingénieur N1 500:1
2.
go back to reference Lenoir B (2010) Les Techniques de l’Ingénieur K 730:1 Lenoir B (2010) Les Techniques de l’Ingénieur K 730:1
4.
go back to reference Minnich AJ, Dresselhauss MS, Ren ZF, Chen G (2009) Energy Environ Sci 2:466CrossRef Minnich AJ, Dresselhauss MS, Ren ZF, Chen G (2009) Energy Environ Sci 2:466CrossRef
5.
8.
go back to reference Venkatasubramanian R, Siivola E, Colpitts T, O’Quinn B (2001) Nature 413:597CrossRef Venkatasubramanian R, Siivola E, Colpitts T, O’Quinn B (2001) Nature 413:597CrossRef
9.
go back to reference Caylor JC, Coonley K, Stuart J, Colpitts T, Venkatasubramanian R (2005) Appl Phys Lett 87:023105CrossRef Caylor JC, Coonley K, Stuart J, Colpitts T, Venkatasubramanian R (2005) Appl Phys Lett 87:023105CrossRef
10.
go back to reference Hochbaum AI, Chen R, Delagado RD, Liang W, Garnette EC, Najarian M, Majumdar A, Yang P (2008) Nature 451:163CrossRef Hochbaum AI, Chen R, Delagado RD, Liang W, Garnette EC, Najarian M, Majumdar A, Yang P (2008) Nature 451:163CrossRef
11.
go back to reference Boukai AI, Bunimovich Y, Tahir-Kheli J, Yu J-K, Goddard WA III, Heath JR (2008) Nature 451:168CrossRef Boukai AI, Bunimovich Y, Tahir-Kheli J, Yu J-K, Goddard WA III, Heath JR (2008) Nature 451:168CrossRef
12.
13.
go back to reference Ohta H, Kim S, Mune Y, Mizoguchi T, Nomura K, Ohta S, Nomura T, Nakanishi Y, Ikuhara Y, Irano M, Hosono H, Koumoto JK (2007) Nat Mater 6:129CrossRef Ohta H, Kim S, Mune Y, Mizoguchi T, Nomura K, Ohta S, Nomura T, Nakanishi Y, Ikuhara Y, Irano M, Hosono H, Koumoto JK (2007) Nat Mater 6:129CrossRef
14.
go back to reference Chen G (2001) Semiconductors and semimetals, vol 71. Academic Press, New York, p 203 Chen G (2001) Semiconductors and semimetals, vol 71. Academic Press, New York, p 203
15.
16.
go back to reference Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus MS, Chen G, Ren Z (2008) Science 320:634CrossRef Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus MS, Chen G, Ren Z (2008) Science 320:634CrossRef
17.
go back to reference Yan X, Poudel B, Ma Y, Liu WS, Joshi G, Wang H, Lan Y, Wang D, Chen G, Ren ZF (2010) Nano Lett 10:3373CrossRef Yan X, Poudel B, Ma Y, Liu WS, Joshi G, Wang H, Lan Y, Wang D, Chen G, Ren ZF (2010) Nano Lett 10:3373CrossRef
18.
go back to reference Joshi G, Lee H, Lan Y, Wang X, Zhu G, Wang D, Gould RW, Cuff DC, Tang MY, Dresselhaus MS, Chen G, Ren Z (2008) Nano Lett 8:4670CrossRef Joshi G, Lee H, Lan Y, Wang X, Zhu G, Wang D, Gould RW, Cuff DC, Tang MY, Dresselhaus MS, Chen G, Ren Z (2008) Nano Lett 8:4670CrossRef
19.
go back to reference Wang XW, Lee H, Lan YC, Zhu GH, Joshi G, Wang DZ, Yang J, Muto AJ, Tang MY, Klatsky J, Song D, Dresselhaus MS, Chen G, Ren ZF (2008) Appl Phys Lett 93:193121CrossRef Wang XW, Lee H, Lan YC, Zhu GH, Joshi G, Wang DZ, Yang J, Muto AJ, Tang MY, Klatsky J, Song D, Dresselhaus MS, Chen G, Ren ZF (2008) Appl Phys Lett 93:193121CrossRef
20.
go back to reference Mingo N, Hauser D, Kobayashi NP, Plissonier M, Shakouri A (2009) Nano Lett 9:711CrossRef Mingo N, Hauser D, Kobayashi NP, Plissonier M, Shakouri A (2009) Nano Lett 9:711CrossRef
21.
go back to reference Xie G, Ohashi O, Chiba K, Yamaguchi N, Song M, Furuya K, Noda T (2003) Mater Sci Eng A 359:384CrossRef Xie G, Ohashi O, Chiba K, Yamaguchi N, Song M, Furuya K, Noda T (2003) Mater Sci Eng A 359:384CrossRef
22.
go back to reference Srinivasaro B, Oh-ishi K, Ohkubo T, Mukai T, Hono K (2008) Scripta Mater 58:759CrossRef Srinivasaro B, Oh-ishi K, Ohkubo T, Mukai T, Hono K (2008) Scripta Mater 58:759CrossRef
25.
go back to reference Bernard-Granger G, Benameur N, Addad A, Nygren M, Guizard C, Deville S (2009) J Mater Res 24:2011CrossRef Bernard-Granger G, Benameur N, Addad A, Nygren M, Guizard C, Deville S (2009) J Mater Res 24:2011CrossRef
26.
27.
28.
29.
go back to reference Fleury E, Lee JH, Kim SH, Kim WT, Kim JS, Kim DH (2003) Metall Mater Trans A 34A:841 Fleury E, Lee JH, Kim SH, Kim WT, Kim JS, Kim DH (2003) Metall Mater Trans A 34A:841
30.
go back to reference Mayerhöfer TG, Shen Z, Leonova E, Edén M, Kriltz A, Popp J (2008) J Sol State Chem 181:2442CrossRef Mayerhöfer TG, Shen Z, Leonova E, Edén M, Kriltz A, Popp J (2008) J Sol State Chem 181:2442CrossRef
34.
35.
go back to reference Mukherjee AK, Bird JE, Dorn JE (1969) Trans ASM 62:155 Mukherjee AK, Bird JE, Dorn JE (1969) Trans ASM 62:155
36.
go back to reference Bernard-Granger G, Addad A, Fantozzi G, Bonnefont G, Guizard C, Vernat D (2010) Acta Mater 58:3390CrossRef Bernard-Granger G, Addad A, Fantozzi G, Bonnefont G, Guizard C, Vernat D (2010) Acta Mater 58:3390CrossRef
38.
go back to reference Schaffler F (2001) In: Levinshtein ME, Rumyantsev SL, Shur MS (eds) Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe. Wiley, New York, p 149 Schaffler F (2001) In: Levinshtein ME, Rumyantsev SL, Shur MS (eds) Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe. Wiley, New York, p 149
39.
go back to reference Gladden JR, Li G, Adebisis R, Firdosy S, Caillat T, Ravi V (2010) Phys Rev B 82:045209CrossRef Gladden JR, Li G, Adebisis R, Firdosy S, Caillat T, Ravi V (2010) Phys Rev B 82:045209CrossRef
43.
go back to reference Su H, Johnson DL (1997) Am Ceram Soc Bull 76:72 Su H, Johnson DL (1997) Am Ceram Soc Bull 76:72
45.
49.
50.
go back to reference Weertman J (1972) Dorn Memorial Symposium, Cleveland, Ohio, US Weertman J (1972) Dorn Memorial Symposium, Cleveland, Ohio, US
51.
go back to reference Philibert J (1991) Atom movements, diffusion and mass transport in solids. Monographies de Physique, Les Editions de Physique, Les Ulis, p 229 Philibert J (1991) Atom movements, diffusion and mass transport in solids. Monographies de Physique, Les Editions de Physique, Les Ulis, p 229
52.
go back to reference Christensen JS, Kuznetsov YA, Radamson HH, Svenson BG (2003) J Appl Phys 94:6533CrossRef Christensen JS, Kuznetsov YA, Radamson HH, Svenson BG (2003) J Appl Phys 94:6533CrossRef
53.
go back to reference Chritensen JS (2004) Dopant diffusion in Si and SiGe. PhD Thesis, Royal Institute of Technology, Department of Microelectronics and Information Technology, Stockholm, Sweden Chritensen JS (2004) Dopant diffusion in Si and SiGe. PhD Thesis, Royal Institute of Technology, Department of Microelectronics and Information Technology, Stockholm, Sweden
Metadata
Title
Spark plasma sintering of a p-type Si1−x Ge x alloy: identification of the densification mechanism by isothermal and anisothermal methods
Authors
Guillaume Bernard-Granger
Amandine Néri
Christelle Navone
Mathieu Soulier
Julia Simon
Maya Marinova-Atanassova
Publication date
01-05-2012
Publisher
Springer US
Published in
Journal of Materials Science / Issue 10/2012
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-012-6282-9

Other articles of this Issue 10/2012

Journal of Materials Science 10/2012 Go to the issue

Premium Partners