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Semiconductors
Published in: Semiconductors 7/2010

01-07-2010 | Low-Dimensional Systems

Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

Authors: O. I. Rumyantsev, P. N. Brunkov, E. V. Pirogov, A. Yu. Egorov

Published in: Semiconductors | Issue 7/2010

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previous article Evolution of exciton states near the percolation threshold in two-phase systems with II–VI semiconductor quantum dots
next article Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields

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Metadata
Title
Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
Authors
O. I. Rumyantsev
P. N. Brunkov
E. V. Pirogov
A. Yu. Egorov
Publication date
01-07-2010
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 7/2010
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782610070110

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