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Semiconductors
Published in: Semiconductors 2/2018

01-02-2018 | Physics of Semiconductor Devices

Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers

Authors: F. I. Zubov, M. V. Maximov, N. Yu. Gordeev, Yu. S. Polubavkina, A. E. Zhukov

Published in: Semiconductors | Issue 2/2018

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previous article Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures
next article Electrical Activity of Extended Defects in Multicrystalline Silicon

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Metadata
Title
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers
Authors
F. I. Zubov
M. V. Maximov
N. Yu. Gordeev
Yu. S. Polubavkina
A. E. Zhukov
Publication date
01-02-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 2/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782618020240

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