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2020 | OriginalPaper | Chapter

3. Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors

Author : Takahiro Nagata

Published in: Nanoscale Redox Reaction at Metal/Oxide Interface

Publisher: Springer Japan

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Abstract

In this chapter, the passivation of an oxide surface by atmospheric-pressure nitrogen plasma (NAP) method to eliminate the intermediate layer effect on a metal/oxide interface is described. NAP can nitride the oxide surface even at room temperature. Hard X-ray photoelectron spectroscopy revealed that NAP treatment reduced the electron accumulation on a ZnO surface and inhibited Zn diffusion into a Pt electrode, both of which are critical issues affecting the Schottky barrier height and ideality factor of a Pt/ZnO structure. After NAP treatment, the Pt Schottky contact showed an improvement of electrical properties.

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Title: Surface Passivation Effect on Schottky Contact Formation of Oxide Semiconductors
Author: Takahiro Nagata
Publisher: Springer Japan
Book: Nanoscale Redox Reaction at Metal/Oxide Interface
Print ISBN: 978-4-431-54849-2

Electronic ISBN: 978-4-431-54850-8

Copyright Year: 2020
DOI: https://doi.org/10.1007/978-4-431-54850-8_3

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