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A Fast Transient Voltage Regulator Design with All Ceramic Output Capacitor for Mobile Microprocessors Read chapter Read first chapter

2017 | OriginalPaper | Chapter

Testing of Embedded SRAMs Using Parasitic Extraction Method

Authors : Muddapu Parvathi, K. Satya Prasad, N. Vasantha

Published in: 9th International Conference on Robotic, Vision, Signal Processing and Power Applications

Publisher: Springer Singapore

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Abstract

The limitation with the existing testing techniques is, if the test does not consider all the aspects of SRAM parameters, including parasitic memory effect, then it will result as an incomplete test. This paper presents a new parasitic extraction testing method for embedded SRAMs, employing defect-induced layout. The defect injection in a circuit is due to an open/short between wires, or missing contacts etc. In this work, only node-to-node short defects are considered. Our test results proved that using parasitic extraction method existing faults as well as undefined faults could be detected. The existing faults identified are Stuck At Fault, (SAF), Undefined Read Fault (URF), Read Destructive Fault (RDF), Undefined Write Fault (UWF), Random Read Fault (RRF), Incorrect Read Fault (IRF), and No Access Fault (NAF). The undefined faults identified are Bit-Line Delay Fault (BDF), Initialization Order Fault (IOF), Un Stabilized Write Fault (USWF), Un Stabilized Read Fault (USRF), and Write Before Access Fault (WBAF). In addition, the complete fault model dictionary is also an outcome of this work.

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Metadata
Title
Testing of Embedded SRAMs Using Parasitic Extraction Method
Authors
Muddapu Parvathi
K. Satya Prasad
N. Vasantha
Copyright Year
2017
Publisher
Springer Singapore
Book
9th International Conference on Robotic, Vision, Signal Processing and Power Applications

Print ISBN: 978-981-10-1719-3

Electronic ISBN: 978-981-10-1721-6

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-981-10-1721-6_6