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From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation Read chapter Read first chapter

2015 | OriginalPaper | Chapter

The Energy Driven Hot Carrier Model

Authors : Stewart E. Rauch, Fernando Guarin

Published in: Hot Carrier Degradation in Semiconductor Devices

Publisher: Springer International Publishing

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Abstract

The so-called “Energy Driven Model” for hot carrier effects in MOS devices was first proposed in 2005 as a replacement for the ubiquitous Lucky Electron Model (LEM) in the short channel regime (especially at or below the 130 nm node) [1]. As MOSFET size and voltage are scaled down, the carrier energy distribution becomes increasingly dependent only on the applied bias, because of quasi-ballistic transport over the high field region. The energy driven model represents a new paradigm of MOSFET hot carrier behavior in which the fundamental driving force is available energy, rather than peak lateral electric field as it is in the LEM. The model predictions are shown to be consistent with experimental impact ionization results. Experimental hot carrier degradation results for a wide range of technologies support the concept of a nearly universal carrier energy dependent cross section of hot carrier damage (Sit).

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previous chapter From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation
next chapter Hot-Carrier Degradation in Decananometer CMOS Nodes: From an Energy-Driven to a Unified Current Degradation Modeling by a Multiple-Carrier Degradation Process
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Metadata
Title
The Energy Driven Hot Carrier Model
Authors
Stewart E. Rauch
Fernando Guarin
Copyright Year
2015
Book
Hot Carrier Degradation in Semiconductor Devices

Print ISBN: 978-3-319-08993-5

Electronic ISBN: 978-3-319-08994-2

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-3-319-08994-2_2