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Semiconductors
Published in: Semiconductors 8/2001

01-08-2001 | Electronic and Optical Properties of Semiconductors

The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy

Authors: T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, Yu. P. Yakovlev

Published in: Semiconductors | Issue 8/2001

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Metadata
Title
The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy
Authors
T. I. Voronina
T. S. Lagunova
E. V. Kunitsyna
Ya. A. Parkhomenko
D. A. Vasyukov
Yu. P. Yakovlev
Publication date
01-08-2001
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 8/2001
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1393025

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Optical properties of germanium monolayers on silicon

Electronic and Optical Properties of Semiconductors

Origin of an absorption band peaked at 5560 cm−1 and related to divacancies in Si1−x Gex

Electronic and Optical Properties of Semiconductors

Preparation and properties of isotopically pure polycrystalline silicon

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Erratum: Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing

Amorphous, Vitreous, and Porous Semiconductors

Effect of temperature on photoconductivity and its decay in microcrystalline silicon

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