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Published in: Semiconductors 16/2019

01-12-2019 | NANOSTRUCTURES TECHNOLOGY

The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope

Authors: N. D. Prasolov, I. A. Ermakov, A. A. Gutkin, V. A. Solov’ev, L. M. Dorogin, S. G. Konnikov, P. N. Brunkov

Published in: Semiconductors | Issue 16/2019

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Abstract

It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes.

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Metadata
Title
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Authors
N. D. Prasolov
I. A. Ermakov
A. A. Gutkin
V. A. Solov’ev
L. M. Dorogin
S. G. Konnikov
P. N. Brunkov
Publication date
01-12-2019
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 16/2019
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782619120224

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