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2016 | OriginalPaper | Chapter

Thiol-Based Self-Assembled Monolayers (SAMs) as an Alternative Surface Finish for 3D Cu Microbumps

Authors : Silvia Armini, Yannick Vandelaer, Alicja Lesniewska, Vladimir Cherman, Inge De Preter, Fumihiro Inoue, Jaber Derakhshandeh, George Vakanas, Eric Beyne

Published in: TMS 2015 144th Annual Meeting & Exhibition

Publisher: Springer International Publishing

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With scaling beyond 40um pitch 3D interconnects, cost, performance and reliability become ever more critical. Thiol-based self-assembled monolayers (SAM) were applied before to enable Cu-Cu connection in dual damascene vias [1]. In this study, we are researched a parallel application, for an alternative, low-cost organic surface finish for electroplated Cu pads/pillar/bumps to enable 3D interconnects [2]. The effects of pre-cleaning, deposition times and self-assembled monolayer (SAM) type (C3, C10, C18) on oxidation resistance and electrical continuity were studied with Voltammetry and X-ray Photoelectron Spectroscopy (XPS). Experiments were performed on electroplated Cu flat samples and process conditions were selected for further processing of 3D patterned dies and subsequent stacking and thermo-compression bonding in a face-to-face configuration. Overall, C18 SAM showed better electrical continuity and lower electrical resistance than C3 and C10, a result which is consistent with the longer C chain and higher thermal stability of C18. A second result of this study — consistent in both flat and patterned samples — was that microwave plasma cleaning prior to SAM deposition was more effective than wet cleaning, indicating either better oxide cleanability or better affinity of SAM’s with more pristine Cu.

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Metadata
Title
Thiol-Based Self-Assembled Monolayers (SAMs) as an Alternative Surface Finish for 3D Cu Microbumps
Authors
Silvia Armini
Yannick Vandelaer
Alicja Lesniewska
Vladimir Cherman
Inge De Preter
Fumihiro Inoue
Jaber Derakhshandeh
George Vakanas
Eric Beyne
Copyright Year
2016
Publisher
Springer International Publishing
DOI
https://doi.org/10.1007/978-3-319-48127-2_161

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