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2023 | OriginalPaper | Chapter

Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics

Authors : P. Murugapandiyan, N. Ramkumar, S. Ravi

Published in: HEMT Technology and Applications

Publisher: Springer Nature Singapore

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Abstract

This chapter reviews the recent progress in ultrawide bandgap AlGaN-channel-based high electron mobility transistors. AlGaN channel is the alternate substitute for the conventional GaN channel. In order to enhance the power handling capability of III-nitride-based heterostructure devices, improving the breakdown performance of the device without reduction in the current density is one of the simplest techniques. AlGaN-channel-based HEMTs favorably increase the critical electric field of the device. For the next-generation RF application, further improving the power handling capabilities of RF modules, AlGaN channel HEMT is the most optimistic applicant and it delivers four times larger GaN HEMT’s power performance and thus becoming the possible substitute to the GaN channel for the next generation power as well as RF devices and circuits. This chapter describes the polarization details of AlxGa1−xN/AlyGa1−yN heterostructure, and various device structure of AlGaN channel HEMTs and their static and dynamic characteristics.

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next chapter Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs
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Metadata
Title
Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics
Authors
P. Murugapandiyan
N. Ramkumar
S. Ravi
Copyright Year
2023
Publisher
Springer Nature Singapore
Book
HEMT Technology and Applications

Print ISBN: 978-981-19-2164-3

Electronic ISBN: 978-981-19-2165-0

Copyright Year: 2023

DOI
https://doi.org/10.1007/978-981-19-2165-0_1