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Published in:
2016 | OriginalPaper | Chapter
Writing Ferroelectric Nanodomains in PZT Thin Film at Low Temperatures
Authors : Alexandr Vakulenko, Natalia Andreeva, Sergej Vakhrushev, Alexandr Fotiadi, Alexey Filimonov
Published in: Internet of Things, Smart Spaces, and Next Generation Networks and Systems
Publisher: Springer International Publishing
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Abstract
Thin ferroelectric films are prospective materials for applications in the area of tunable microwave electronics as a base for varactors, phase shifters, delay lines, tunable filters and antennas. The most important technological aspect of using thin polar films in electronics is a possibility of miniaturization. By means of piezoresponse force microscopy technique, it is possible to create nanometer-sized areas (or ferroelectric domains) in thin films with preferable direction of polarization. Besides the fact that these domains could be used as a bit for mass storage application, it was found, that domain walls have their own properties, moreover, they are mobile. This circumstance could give rise to a new type of technology where mobile domain walls will be the “active ingredient” of the device.
In this work, we use a scanning piezoresponse force microscopy to investigate the process of writing and growth of ferroelectric domains in thin PbZr0.3Ti0.7O3 film in a broad temperature range. It was found that even at 4.2 K nanoscale ferroelectric domains could be writing by application of short voltage pulses between the tip of atomic force microscope and extended bottom electrode. Based on the obtained experimental results the mechanism driven the ferroelectric domain dynamics in thin films at low temperatures was determined.