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Technical Physics
Published in: Technical Physics 5/2019

01-05-2019 | PHYSICAL SCIENCE OF MATERIALS

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Authors: V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov, Yu. S. Krivonosov, F. N. Chukhovskii

Published in: Technical Physics | Issue 5/2019

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Abstract

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness Leff and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.
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Metadata
Title
X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions
Authors
V. E. Asadchikov
I. G. D’yachkova
D. A. Zolotov
Yu. S. Krivonosov
F. N. Chukhovskii
Publication date
01-05-2019
Publisher
Pleiades Publishing
Published in
Technical Physics / Issue 5/2019
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI
https://doi.org/10.1134/S1063784219050049

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