2004 | OriginalPaper | Chapter
1/f Noise Sources
Author : F.N. Hooge
Published in: Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices
Publisher: Springer Netherlands
Included in: Professional Book Archive
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
1/f noise is a fluctuation in the bulk conductance of semiconductors and metals. This noise could be a fluctuation in the number of the free electrons or in their mobility. Many experimental studies on homogenous layers have proved that the 1/f noise is a fluctuation in the mobility. There is no theoretical model of mobility 1/f noise. The McWhorter model for 1/f noise in MOSTs simply adds generation-recombination spectra from surface states. According to this model, estimates of the noise magnitude give unrealistic values. More important, the McWhorter model is a model on number fluctuations, because GR noise always is a fluctuation in number. There is no experimental proof of number fluctuations in the 1/f noise of MOSTs.