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2004 | OriginalPaper | Chapter

1/f Noise Sources

Author : F.N. Hooge

Published in: Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices

Publisher: Springer Netherlands

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1/f noise is a fluctuation in the bulk conductance of semiconductors and metals. This noise could be a fluctuation in the number of the free electrons or in their mobility. Many experimental studies on homogenous layers have proved that the 1/f noise is a fluctuation in the mobility. There is no theoretical model of mobility 1/f noise. The McWhorter model for 1/f noise in MOSTs simply adds generation-recombination spectra from surface states. According to this model, estimates of the noise magnitude give unrealistic values. More important, the McWhorter model is a model on number fluctuations, because GR noise always is a fluctuation in number. There is no experimental proof of number fluctuations in the 1/f noise of MOSTs.

Metadata
Title
1/f Noise Sources
Author
F.N. Hooge
Copyright Year
2004
Publisher
Springer Netherlands
DOI
https://doi.org/10.1007/1-4020-2170-4_1