A design approach of bonding head guiding platform for die to wafer hybrid bonding application using compliant mechanism

In semiconductor manufacturing process, the wafer direct bonding, so-called die-to-wafer hybrid bonding, still has unexpected voids on the boning surface which decreases the bonding efficiency. Therefore, this paper proposes a design approach for the bonding head guiding platform (BHGP) based on compliant mechanism for the die-to-wafer hybrid bonding. Firstly, a bridge amplification module (BAM) is designed and simulated. Secondly, a dual parallelogram module (DPM) is designed and analyzed. Then, the BAM is combined with the DPM to create a full design of the BHGP. To investigate the parametric effect of the geometric inputs on the output behaviors of the platform, the parameter sensitivity is conducted. The multi-objective optimization study is performed using multi-objective genetic algorithm. The results determined the displacement can gain up to 191.88 μm, the parasitic error has a small value of 1.47 μm, and the von Mises stress is minimal value of 52 MPa. The crosstalk of the platform is about 3.82%, and this ratio ensures a linear characteristic of the platform. A small value of stress allows a high safety factor during operation. The result of this study is expected be utilized for removing voids in the die-to-wafer hybrid bonding process.