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Journal of Materials Engineering and Performance

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01-10-2008

A New Model for Inverse Hall-Petch Relation of Nanocrystalline Materials

Authors: Ali Shafiei Mohammadabadi, Kamran Dehghani

Published in: Journal of Materials Engineering and Performance | Issue 5/2008

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Abstract

In the present article, a new model for inverse Hall-Petch relation in nanocrystalline materials has been proposed. It is assumed that lattice distortion along grain boundaries can cause internal stresses and high internal stresses along grain boundaries can promote the grain boundary yielding. The designed model was then verified using the nanocrystalline-copper data. The minimum grain size for inverse Hall-Petch relation is determined to be about 11 nm for Cu.

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Title: A New Model for Inverse Hall-Petch Relation of Nanocrystalline Materials
Authors: Ali Shafiei Mohammadabadi
Kamran Dehghani
Publication date: 01-10-2008
Publisher: Springer US
Published in: Journal of Materials Engineering and Performance / Issue 5/2008
Print ISSN: 1059-9495
Electronic ISSN: 1544-1024
DOI: https://doi.org/10.1007/s11665-008-9206-8

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