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Journal of Computational Electronics

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21-01-2019

A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET

Authors: Nidhal Abdelmalek, Fayçal Djeffal, Toufik Bentrcia

Published in: Journal of Computational Electronics | Issue 1/2019

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Abstract

A semianalytical model based on a nonlocal approach is proposed for an undoped tunnel field-effect transistor (TFET) with a vertical surrounding-gate structure. The heterostructure band alignment is computed by applying the affinity rule on suitable potential expressions obtained from the two-dimensional (2-D) electrostatic solution for all device regions. The fringing field, doping-induced degeneracy, ambipolarity, and dual modulation effects are included with the aim of obtaining a large domain of validity. The core model is completed with expressions for the capacitance of the terminals and validated against numerical simulations obtained using ATLAS-2D software. An investigation of the types of band alignment and the impact of doping on the device performance is also conducted. The developed models could be implemented into commercial simulators to investigate circuits based on such multigate field-effect transistors (FETs).

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Title: A nonlocal approach for semianalytical modeling of a heterojunction vertical surrounding-gate tunnel FET
Authors: Nidhal Abdelmalek
Fayçal Djeffal
Toufik Bentrcia
Publication date: 21-01-2019
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 1/2019
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-019-01302-w

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