A Novel Low-Power Nonvolatile 8T1M SRAM Cell

In Static Random Access Memory (SRAM) that is most ubiquitous of portable devices, the power consumption is a major concern. The emerging nonvolatile device-based SRAM designs have shown reduced power consumption by enabling power down mode without the loss of data. This paper presents a novel nonvolatile SRAM cell that employs eight transistors and a single TiO₂ memristor as a nonvolatile device. The proposed 8T1M has low write power consumption, low store/restore energy and does not require reset phase. The performance of the proposed cell is compared with existing 8 T nvSRAM cells to demonstrate its versatility over others. The proposed cell shows 99.7% and 47% reductions in write ‘0’ power consumption and store/restore energy, respectively, with respect to existing 8 T nvSRAM counterparts, while the corresponding improvement in write margins and average store/restore delay is 69% and 70%. The results at different power supply and technology nodes are also captured to validate the impeccable performance of the proposed cell.