Top

Optical and Quantum Electronics

Published in:

01-11-2016

Advantages of GaN-based LEDs with two-step graded AlGaN last quantum barrier

Authors: Chang Sheng Xia, Yang Sheng, Z. M. Simon Li

Published in: Optical and Quantum Electronics | Issue 11/2016

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

GaN-based multiple quantum well light-emitting diodes (LEDs) with the conventional, graded and two-step graded AlGaN last quantum barriers (LQBs) are investigated numerically. The simulation results show that the LED with two-step graded AlGaN LQB exhibits much higher light output power, lower turn-on voltage and smaller efficiency droop than those with the conventional and graded AlGaN LQBs. These improvements can be mainly attributed to the reduction of the electrostatic fields in the LQB and electron blocking layer caused by the mitigation of polarization effect with the redesigned LQB which enhances the electron confinement and improves the hole injection efficiency from p-type region greatly. Moreover, the two-step graded LQB not only improves the electron confinement of the EBL but also that of itself.

previous article Enhanced the tunable omnidirectional photonic band gaps in the two-dimensional plasma photonic crystals

next article Design criteria for silicon nanostructures in silicon based triple junction solar cell

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

APSYS, Crosslight Software Inc., Burnaby. http://www.crosslight.com (2015)

Chen, J., Fan, G.H., Pang, W., Zheng, S.W., Zhang, Y.Y.: Improvement of efficiency droop in blue InGaN light-emitting diodes with p-InGaN/GaN superlattice last quantum barrier. IEEE Photonics Technol. Lett. 24, 2218–2220 (2012)ADSCrossRef

Cheng, L.W., Wu, S.D.: Performance enhancement of blue InGaN light-emitting diodes with a GaN–AlGaN–GaN last barrier and without an AlGaN electron blocking layer. IEEE J. Quantum Electron. 50, 261–266 (2014)ADSCrossRef

Cheng, L., Wu, S., Chen, H., Gong, D., Wei, Y.: Electron confinement and hole injection improvement in InGaN/GaN light-emitting diodes with graded-composition last quantum barrier and without electron blocking layer. J. Disp. Technol. 11, 753–758 (2015)ADSCrossRef

Choi, S., Kim, H.J., Kim, S.S., Liu, J., Kim, J., Ryou, J.H., Dupuis, R.D., Fischer, A.M., Ponce, F.A.: Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer. Appl. Phys. Lett. 96(221105), 1–3 (2010)

Fan, X.C., Sun, H.Q., Li, X.N., Sun, H., Zhang, C., Zhang, Z.D., Guo, Z.Y.: Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer. Superlattices Microstruct. 88, 467–473 (2015)ADSCrossRef

Fiorentini, V., Bernardini, F., Ambacher, O.: Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures. Appl. Phys. Lett. 80, 1204–1206 (2002)ADSCrossRef

Hu, W., Chen, X., Yin, F., Zhang, J., Lu, W.: Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J. Appl. Phys. 105(084502), 1–7 (2009)

Kim, M.H., Schubert, M.F., Dai, Q., Kim, J.K., Schubert, E.F., Piprek, J., Park, Y.: Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett. 91(183507), 1–3 (2007)

Kuo, Y.K., Chang, J.Y., Tsai, M.C., Yen, S.H.: Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers. Appl. Phys. Lett. 95(011116), 1–3 (2009)

Kuo, Y.K., Tsai, M.C., Yen, S.H., Hsu, T.C., Shen, Y.J.: Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes. IEEE J. Quantum Electron. 46, 1214–1220 (2010)ADSCrossRef

Kuo, Y.K., Wang, T.H., Chang, J.Y., Tsai, M.C.: Advantages of InGaN light-emitting diodes with GaN–InGaN–GaN barriers. Appl. Phys. Lett. 99(091107), 1–3 (2011)

Kyaw, Z., Zhang, Z.H., Liu, W., Tan, S.T., Ju, Z.G., Zhang, X.L., Ji, Y., Hasanov, N., Zhu, B., Lu, S., Zhang, Y., Teng, J.H., Wei, S.X., Demir, H.V.: Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes. Appl. Phys. Lett. 104(161113), 1–5 (2014)

Liu, C., Ren, Z., Chen, X., Zhao, B., Wang, X., Li, S.: Reduced droop effect in nitride light emitting diodes with taper-shaped electron blocking layer. IEEE Photonics Technol. Lett. 26, 1368–1371 (2014)CrossRef

Lu, W., Zhang, T., He, S.M., Zhang, B., Li, N., Liu, S.S.: Light-emitting diodes for space applications. Opt. Quantum Electron. 41, 883–893 (2009)CrossRef

Mukai, T., Yamada, M., Nakamura, S.: Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes. Jpn. J. Appl. Phys. Part 1(38), 3976–3981 (1999)ADSCrossRef

Pimputkar, S., Speck, J.S., DenBaars, S.P., Nakamura, S.: Prospects for LED lighting. Nat. Photonics 3, 180–182 (2009)ADSCrossRef

Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207, 2217–2225 (2010)ADSCrossRef

Piprek, J., Li, S.: Electron leakage effects on GaN-based light-emitting diodes. Opt. Quantum Electron. 42, 89–95 (2010)CrossRef

Rozhansky, I.V., Zakheim, D.A.: Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density. Semiconductors 40, 839–845 (2006)ADSCrossRef

Shen, Y.C., Mueller, G.O., Watanahe, S., Gardner, N.F., Munkholm, A., Krames, M.R.: Auger recombination in InGaN measured by photoluminescence. Appl. Phys. Lett. 91(141101), 1–3 (2007)

Sun, W., Shatalov, M., Deng, J., Hu, X., Yang, J., Lunev, A., Bilenko, Y., Shur, M., Gaska, R.: Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power. Appl. Phys. Lett. 96(061102), 1–3 (2010)CrossRef

Wang, C.H., Ke, C.C., Lee, C.Y., Chang, S.P., Chang, W.T., Li, J.C., Li, Z.Y., Yang, H.C., Kuo, H.C., Lu, T.C., Wang, S.C.: Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer. Appl. Phys. Lett. 97(261103), 1–3 (2010)

Wang, X., Hu, W., Chen, X., Lu, W.: The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs. IEEE Trans. Electron. Dev. 59, 1393–1401 (2012)ADSCrossRef

Xia, C.S., Hu, W.D., Wang, C., Li, Z.F., Chen, X.S., Lu, W., Li, Z.M.S., Li, Z.Q.: Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects. Opt. Quantum Electron. 38, 1077–1089 (2006)CrossRef

Xia, C.S., Li, Z.M.S., Lu, W., Zhang, Z.H., Sheng, Y., Cheng, L.W.: Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier. Appl. Phys. Lett. 99(233501), 1–3 (2011)

Xia, C.S., Li, Z.M.S., Lu, W., Zhang, Z.H., Sheng, Y., Hu, W.D., Cheng, L.W.: Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN–GaN–AlGaN electron blocking layer. J. Appl. Phys. 111(094503), 1–4 (2012)CrossRef

Yen, S.H., Tsai, M.L., Tsai, M.C., Chang, S.J., Kuo, Y.K.: Investigation of optical performance of InGaN MQW LED with thin last barrier. IEEE Photonics Technol. Lett. 22, 1787–1789 (2010)ADSCrossRef

Zhang, F., Can, N., Hafiz, S., Monavarian, M., Das, S., Avrutin, V., Özgür, Ü., Morkoç, H.: Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers. Appl. Phys. Lett. 106(181105), 1–3 (2015)

Zhou, K., Ikeda, M., Liu, J., Zhang, S., Li, D., Zhang, L., Cai, J., Wang, H., Wang, H.B., Yang, H.: Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes. Appl. Phys. Lett. 105(173510), 1–4 (2014)

Title: Advantages of GaN-based LEDs with two-step graded AlGaN last quantum barrier
Authors: Chang Sheng Xia
Yang Sheng
Z. M. Simon Li
Publication date: 01-11-2016
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 11/2016
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-016-0785-6

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Technik"

Springer Professional "Wirtschaft+Technik"

Springer Professional "Wirtschaft"

Other articles of this Issue 11/2016

Enhancing upconversion emission of Yb3+–Er3+ co-doped NaYF4 by doping TiO2

Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors

Super-continuum generation of an optical pulse in a silicon micro-ring resonator

Efficient all-optical control of solitons

Resonant control of fluorescence from aluminium doped zinc oxide films

Graphene oxide nanoparticles for two-photon fluorescence imaging of zebrafish