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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 11/2016

01.11.2016

Advantages of GaN-based LEDs with two-step graded AlGaN last quantum barrier

verfasst von: Chang Sheng Xia, Yang Sheng, Z. M. Simon Li

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2016

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Abstract

GaN-based multiple quantum well light-emitting diodes (LEDs) with the conventional, graded and two-step graded AlGaN last quantum barriers (LQBs) are investigated numerically. The simulation results show that the LED with two-step graded AlGaN LQB exhibits much higher light output power, lower turn-on voltage and smaller efficiency droop than those with the conventional and graded AlGaN LQBs. These improvements can be mainly attributed to the reduction of the electrostatic fields in the LQB and electron blocking layer caused by the mitigation of polarization effect with the redesigned LQB which enhances the electron confinement and improves the hole injection efficiency from p-type region greatly. Moreover, the two-step graded LQB not only improves the electron confinement of the EBL but also that of itself.
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Metadaten
Titel
Advantages of GaN-based LEDs with two-step graded AlGaN last quantum barrier
verfasst von
Chang Sheng Xia
Yang Sheng
Z. M. Simon Li
Publikationsdatum
01.11.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 11/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-016-0785-6

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