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Semiconductors
Published in: Semiconductors 4/2009

01-04-2009 | Physics of Semiconductor Devices

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

Authors: V. G. Mokerov, A. L. Kuznetsov, Yu. V. Fedorov, A. S. Bugaev, A. Yu. Pavlov, E. N. Enyushkina, D. L. Gnatyuk, A. V. Zuev, R. R. Galiev, E. N. Ovcharenko, Yu. N. Sveshnikov, A. F. Tsatsulnikov, V. M. Ustinov

Published in: Semiconductors | Issue 4/2009

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Metadata
Title
AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
Authors
V. G. Mokerov
A. L. Kuznetsov
Yu. V. Fedorov
A. S. Bugaev
A. Yu. Pavlov
E. N. Enyushkina
D. L. Gnatyuk
A. V. Zuev
R. R. Galiev
E. N. Ovcharenko
Yu. N. Sveshnikov
A. F. Tsatsulnikov
V. M. Ustinov
Publication date
01-04-2009
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 4/2009
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782609040253

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