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Published in:
The Logical Effort Method Read chapter Read first chapter

2015 | OriginalPaper | Chapter

5. Analysis and Comparison in the Energy-Delay-Area Domain

Authors : Massimo Alioto, Elio Consoli, Gaetano Palumbo

Published in: Flip-Flop Design in Nanometer CMOS

Publisher: Springer International Publishing

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Abstract

In this chapter, results relative to an extensive comparison in a 65 nm CMOS technology of existing FFs classes and topologies are reported. In contrast to previous investigations, the analysis explicitly accounts for effects that arise in nanometer technologies and affect the energy-delay-area tradeoff such as leakage and layout and interconnect impact. The analysis involves a significantly wider range of FF classes and topologies. The tradeoffs between leakage, area, clock load, delay and other interesting properties are extensively discussed. The investigation permits to derive several considerations on each FF class and to identify the best topologies for a targeted application.

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previous chapter Flip-Flop Optimized Design
next chapter Energy Efficiency Versus Clock Slope
Footnotes
1
Sometimes, the nodes voltages can take long times to reach the 99 % of the steady value. Anyhow, when not employing simple pass-transistors that cause a threshold drop and when all transistors are properly sized according to the architectural T CK /FO4 specification [4], the 99 % value can be closely approached in practically acceptable times. Nevertheless, a good estimation of transient energy comes out also considering slightly smaller values than 99 % (e.g. 90 %), and hence it is simply a matter of convention when characterizing a FF.
 
2
X opt is the optimum tapering factor leading to the minimum clocking energy in the clock domain.
 
Metadata
Title
Analysis and Comparison in the Energy-Delay-Area Domain
Authors
Massimo Alioto
Elio Consoli
Gaetano Palumbo
Copyright Year
2015
Book
Flip-Flop Design in Nanometer CMOS

Print ISBN: 978-3-319-01996-3

Electronic ISBN: 978-3-319-01997-0

Copyright Year: 2015

DOI
https://doi.org/10.1007/978-3-319-01997-0_5