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Journal of Materials Science: Materials in Electronics

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11-03-2020

Analytical investigation of ion-sensitive field effect transistor based on graphene

Authors: Elnaz Akbari, Narjes Nabipour, Seyed Morteza Hadavi, Mehrbakhsh Nilashi

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2020

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Abstract

The purpose of this analytical research is the capability of sensing different K+ concentrations by the ion-sensitive field effect transistor (ISFET) based on graphene. By gate voltage variation values, K+ ion concentration in the electrolyte can be measured, since there are interactions between the K+ and the gate ions. We have applied the adaptive neuro-fuzzy inference system (ANFIS) model to predict the current–voltage (I–V) characteristic which has resulted in satisfactory performance.

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Title: Analytical investigation of ion-sensitive field effect transistor based on graphene
Authors: Elnaz Akbari
Narjes Nabipour
Seyed Morteza Hadavi
Mehrbakhsh Nilashi
Publication date: 11-03-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 8/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-03201-4

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