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Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics Read chapter Read first chapter

2023 | OriginalPaper | Chapter

Analytical Modeling of Electric Field and Breakdown Voltage Characteristics of AlInN/GaN HEMT with Field Plates

Authors : G. Amarnath, Manisha Guduri, M. C. Chinnaiah

Published in: HEMT Technology and Applications

Publisher: Springer Nature Singapore

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Abstract

An analytical modeling of electric field and breakdown voltage characteristics of AlInN/GaN HEMT with field plate at drain and gate regions is presented. In the model development, GaN buffer and Si substrate regions are treated as depletion regions. The developed model gives a deep physical understanding of the electric field and breakdown voltage characteristics of AlInN/GaN HEMT devices. The avalanche breakdown of a device appears in the vertical interface or edges of lateral field-plate structures. The relationship between vertical and lateral breakdown with respect to analytical modeling is presented. The breakdown characteristics are analyzed with device parameters including the thickness of regions, the length of field plate, and the distance between gate and drain. These analytical model characteristics are verified by matching with numerical simulations and are found in good agreement. The developed model can be used as an effective direction for the optimization of the device to accomplish better performance.

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previous chapter Study of Different Transport Properties of MgZnO/ZnO and AlGaN/GaN High Electron Mobility Transistors: A Review
next chapter Performance Analysis of HfO2 and Si3N4 Dielectrics in β-Ga2O3 HEMT
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Metadata
Title
Analytical Modeling of Electric Field and Breakdown Voltage Characteristics of AlInN/GaN HEMT with Field Plates
Authors
G. Amarnath
Manisha Guduri
M. C. Chinnaiah
Copyright Year
2023
Publisher
Springer Nature Singapore
Book
HEMT Technology and Applications

Print ISBN: 978-981-19-2164-3

Electronic ISBN: 978-981-19-2165-0

Copyright Year: 2023

DOI
https://doi.org/10.1007/978-981-19-2165-0_5