Annealing kinetics of gold and iron–gold complex

Thermally induced defects in heat treated and then quenched in water n-silicon samples have been studied using deep level transient spectroscopy. Two deep levels at energies E _c-0.55 eV, and E _c-0.23 eV are observed in high concentration. The emission rate signature and annealing characteristics of energy state E _c-0.55 eV identify it as Au(A). During annealing a level emerges at energy position E _c-0.35 eV. This level has been identified as Au–Fe complex. Au(A) and Au–Fe showed an interesting reversible reaction in temperature range 175 °C–325 °C which follows the following theoretical relation that adds a new parameter in identifying Au(A) and Au–Fe complex. It is also noted that E _c-0.55 eV and E _c-0.23 eV contribute to the formation of Au–Fe complex.