1985 | OriginalPaper | Chapter
Atomic and Electronic Structure of p (1 × 1) Overlayers of Sb on the (110) Surfaces of III-V Semiconductors
Authors : C. B. Duke, C. Mailhiot, A. Paton, K. Li, C. Bonapace, A. Kahn
Published in: The Structure of Surfaces
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
The prediction of the atomic geometries of overlayers for compound semiconductors is a topic of considerable current interest, especially with regard to the mechanisms of Schottky barrier formation and the growth (e.g., by molecular-beam epitaxy) of multilayer heterojunction systems [50.1]. Moreover, such geometries are now being determined experimentally, for example by elastic low-energy electron diffraction (ELEED) intensity analyses [50.2, 3]. Thus, an opportunity exists to develop and test predictive models of the geometrical and electronic structure of ordered overlayers on semiconductor surfaces. In this contribution we present a tight-binding calculation of the atomic geometries and surface-state eigenvalue spectra of p(l × 1) overlayers of Sb on the (110) surfaces of III-V semiconductors which predicts accurately the measured structures and surface-state spectra of these surfaces. The particular systems which we examined are ordered (l × l) saturated monolayers of Sb on the (110) surfaces of GaP, GaAs, GaSb, InP, InAs and InSb. A schematic diagram of the experimental surface atomic geometry is given in Fig.50.1.