Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Technical Physics
Published in: Technical Physics 10/2018

01-10-2018 | PHYSICAL ELECTRONICS

Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches

Authors: A. V. Fadeev, K. V. Rudenko

Published in: Technical Physics | Issue 10/2018

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.
previous article Generation of High-Intensity Aluminum-Ion Beams at Low Energy
next article Determination of a Dose Absorbed in a Biological Sample under Mixed Gamma–Neutron Irradiation

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
Atomic Layer Deposition of Nanostructured Materials, Ed. by N. Pinna and M. Knez (Wiley, 2012).
2.
C. Wulu, R. C. Saraswat, and J. P. McVittie, J. Electrochem. Soc. 138, 1831 (1991).CrossRef
3.
J. W. Elam, D. Routkevitch, P. P. Mardilovich, and S. M. George, Chem. Mater. 15, 3507 (2003).CrossRef
4.
5.
H. C. M. Knoops, E. Langereis, M. C. M. van de Sanden, and M. M. Kessels, J. Electrochem. Soc. 57, G241 (2010).CrossRef
6.
7.
8.
A. V. Fadeev, A. V. Myakon’kikh, and K. V. Rudenko, Tech. Phys. 63, 235 (2018).CrossRef
Metadata
Title
Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches
Authors
A. V. Fadeev
K. V. Rudenko
Publication date
01-10-2018
Publisher
Pleiades Publishing
Published in
Technical Physics / Issue 10/2018
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI
https://doi.org/10.1134/S1063784218100092

Other articles of this Issue 10/2018

Technical Physics 10/2018 Go to the issue

EXPERIMENTAL INSTRUMENTS AND TECHNIQUE

Double-Membrane Sampling System in a Mass Spectrometer for the Study of Exhaled Air

PHYSICAL APPROACHES AND PROBLEMS OF DATA INTERPRETATION IN THE LIFE SCIENCES

Thermoelectric and Thermoelectrokinetic Phenomena in Liquid Biological Systems

PLASMA

Gas Electric Discharge with a Developed Streamer Structure in a Quasi-Optical Microwave Beam

PHYSICAL SCIENCE OF MATERIALS

Nanopore Evolution Kinetics during Annealing of Submicrocrystalline Materials

BIOMEDICAL PHYSICS

A Hardware-Software Package for Analyzing the Gait of Patients with Normal Pressure Hydrocephalus

SOLID STATE ELECTRONICS

Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures

Premium Partners

    Image Credits