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Journal of Materials Science
Published in: Journal of Materials Science 5/2018

31-10-2017 | Electronic materials

Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy

Authors: Shuxing Zhou, Likun Ai, Ming Qi, Shumin Wang, Anhuai Xu, Qi Guo

Published in: Journal of Materials Science | Issue 5/2018

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Abstract

Carbon-doped InGaAsBi films on InP/Fe (100) substrates have been grown by molecular beam epitaxy (MBE). It has been found that Bismuth incorporation induces extremely high n-type carbon-doped InGaAsBi films, and its electron concentration increases linearly up to 1021 cm−3 (highest reported to date for n-type III-V semiconductor materials) with increased CBr4 supply pressure, implying InGaAsBi to be a prospective ohmic contact material for InP-based terahertz transistors. It also has been proved by secondary ion mass spectroscopy that the alloy composition of carbon-doped InGaAsBi is altered by the preferential etching effect of CBr4, but the etching effect on the Bi content is negligible.
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Metadata
Title
Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy
Authors
Shuxing Zhou
Likun Ai
Ming Qi
Shumin Wang
Anhuai Xu
Qi Guo
Publication date
31-10-2017
Publisher
Springer US
Published in
Journal of Materials Science / Issue 5/2018
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1765-3

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