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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2021

03-01-2021

Bi-stable magnetoelectric data flip-flop triggered by magnetic field

Authors: Kang Li, Jitao Zhang, Qingfang Zhang, D. A. Filippov, Jie Wu, Jiagui Tao, Liying Jiang, Lingzhi Cao, Gopalan Srinivasan

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2021

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Abstract

A magnetoelectric (ME) D-FF device in composite of Ni-Zn ferrite/PZT/ Ni-Zn ferrite symmetrical laminate with coil wound around it has been presented. Taking advantage of remnant magnetization effect and ME coupling mediated by strain controlled by bias magnetic field, non-volatile ME voltage of + 60.3 mV and − 59.4 mV can be clearly observed at the EMR of 58 kHz in absence of HDC. Moreover, two types of ME voltages between + 234.4 mV and − 233 mV are switched due to the magneto-mechanic strain variation, when HDC jumps from + 38 Oe to − 38 Oe, or vice versa. The functions of logic “tracking” and “holding”, On+1 = D1 or On+1 = On, are observed at running time. These findings provide great possibilities of the D-FF (counter) based on ME composite applied in proximity readers, to effectively avoid the issues of the high consumption due to using conventional D-FF/counter.
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Metadata
Title
Bi-stable magnetoelectric data flip-flop triggered by magnetic field
Authors
Kang Li
Jitao Zhang
Qingfang Zhang
D. A. Filippov
Jie Wu
Jiagui Tao
Liying Jiang
Lingzhi Cao
Gopalan Srinivasan
Publication date
03-01-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04989-x

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