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Published in: Journal of Materials Science: Materials in Electronics 20/2021

13-09-2021

Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors

Authors: Kusumita Kundu, Arnab Ghosh, Shewli Pratihar, Shiv Govind Singh, Tarun Kumar Kayal, Rajat Banerjee

Published in: Journal of Materials Science: Materials in Electronics | Issue 20/2021

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Abstract

In this paper, we are reporting for the first time, the piezosensing characterisations of the SiC thin film on silicon, synthesized from boron containing Liquid Polycarbosilane (PCS) as a precursor deposited by Modified Chemical Vapour Deposition (MoCVD) technique followed by the structural characterisation of the film. Comparison was done on the result of the both undoped and doped SiC thin film to highlight the effect of boron doping on the piezo property of the SiC. Interestingly, it was observed that piezoelectric coefficient (d33) of the boron doped SiC thin film was substantially higher (21.33 pm/V) than the undoped SiC thin film (16.21 pm/V). The enhancement in d33 was analysed considering the polarisation inside the thin film created by boron doping. The result shows a promising boron doped SiC thin film material for the application in high temperature piezo sensors.

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Metadata
Title
Boron doped SiC thin film on Silicon synthesized from polycarbosilane: a new lead free material for applications in piezosensors
Authors
Kusumita Kundu
Arnab Ghosh
Shewli Pratihar
Shiv Govind Singh
Tarun Kumar Kayal
Rajat Banerjee
Publication date
13-09-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 20/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-06966-4

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