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Published in:
Crystal Growth Techniques and Characterization: An Overview Read chapter Read first chapter

2010 | OriginalPaper | Chapter

10. Bulk Crystal Growth of Ternary III–V Semiconductors

Author : Partha S. Dutta

Published in: Springer Handbook of Crystal Growth

Publisher: Springer Berlin Heidelberg

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Abstract

Ternary semiconductor substrates with variable bandgaps and lattice constants are key enablers for next-generation advanced electronic, optoelectronic, and photovoltaic devices. This chapter presents a comprehensive review of the crystal growth challenges and methods to grow large-diameter, compositionally homogeneous, bulk ternary III–V semiconductors based on As, P, and Sb compounds such as GaInSb, GaInAs, InAsP, AlGaSb, etc. The Bridgman and gradient freezing techniques are the most successfully used methods for growing ternary crystals with a wide range of alloy compositions. Control of heat and mass transport during the growth of ternary compounds is crucial for achieving high-quality crystals. Melt mixing and melt replenishment methods are discussed. The scale-up issues for commercial viability of ternary substrates is also outlined.

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previous chapter Czochralski Growth of Oxide Photorefractive Crystals
next chapter Growth and Characterization of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals for Infrared Detector Applications
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Metadata
Title
Bulk Crystal Growth of Ternary III–V Semiconductors
Author
Partha S. Dutta
Copyright Year
2010
Book
Springer Handbook of Crystal Growth

Print ISBN: 978-3-540-74182-4

Electronic ISBN: 978-3-540-74761-1

Copyright Year: 2010

DOI
https://doi.org/10.1007/978-3-540-74761-1_10

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