18-07-2017
Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation
Published in: Journal of Electronic Materials | Issue 11/2017
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by