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Optical and Quantum Electronics
Published in: Optical and Quantum Electronics 3/2019

01-03-2019

Characterizations of 2-(pyranoquinolin-4-yl) malononitrile/p-silicon heterojunction

Authors: N. M. Khusayfan, M. M. El-Nahass

Published in: Optical and Quantum Electronics | Issue 3/2019

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Abstract

Thin film of 2-(pyranoquinolin-4-yl) malononitrile, PQM, was deposited on p-Si to fabricate a heterojunction of PQM/Si. Current–voltage characteristics for PQM/p-Si were investigated as a function of temperature. The diode ideality factor was calculated at different temperatures. The mechanisms for current transport in forward and reverse bias were deduced. At low voltage, the thermionic emission is the predominant mechanism of charge transport in PQM/p-Si. While ohmic conduction was observed at the higher voltage in PQM/p-Si. The photovoltaic performance for PQM/p-Si under illumination was studied and the parameters of short circuit photocurrent ISC, open-circuit photovoltage Voc and fill factor FF were calculated.
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Metadata
Title
Characterizations of 2-(pyranoquinolin-4-yl) malononitrile/p-silicon heterojunction
Authors
N. M. Khusayfan
M. M. El-Nahass
Publication date
01-03-2019
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 3/2019
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-1796-x

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Correction to: Self-frequency shift and nonlinear interaction of equilibrium and pulsating solutions in the presence of linear and nonlinear gain, spectral filtering, and intrapulse Raman scattering