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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 3/2019

01.03.2019

Characterizations of 2-(pyranoquinolin-4-yl) malononitrile/p-silicon heterojunction

verfasst von: N. M. Khusayfan, M. M. El-Nahass

Erschienen in: Optical and Quantum Electronics | Ausgabe 3/2019

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Abstract

Thin film of 2-(pyranoquinolin-4-yl) malononitrile, PQM, was deposited on p-Si to fabricate a heterojunction of PQM/Si. Current–voltage characteristics for PQM/p-Si were investigated as a function of temperature. The diode ideality factor was calculated at different temperatures. The mechanisms for current transport in forward and reverse bias were deduced. At low voltage, the thermionic emission is the predominant mechanism of charge transport in PQM/p-Si. While ohmic conduction was observed at the higher voltage in PQM/p-Si. The photovoltaic performance for PQM/p-Si under illumination was studied and the parameters of short circuit photocurrent ISC, open-circuit photovoltage Voc and fill factor FF were calculated.
Vorheriger Artikel An investigation of 60Co gamma radiation-induced effects on the properties of nanostructured α-MoO3 for the application in optoelectronic and photonic devices
Nächster Artikel A large family of optical solutions to Kundu–Eckhaus model by a new auxiliary equation method

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Metadaten
Titel
Characterizations of 2-(pyranoquinolin-4-yl) malononitrile/p-silicon heterojunction
verfasst von
N. M. Khusayfan
M. M. El-Nahass
Publikationsdatum
01.03.2019
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 3/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-1796-x

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