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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 1/2019

13-11-2018

Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

Authors: V. V. Atuchin, M. S. Lebedev, I. V. Korolkov, V. N. Kruchinin, E. A. Maksimovskii, S. V. Trubin

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2019

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Abstract

The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.
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Appendix
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Metadata
Title
Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method
Authors
V. V. Atuchin
M. S. Lebedev
I. V. Korolkov
V. N. Kruchinin
E. A. Maksimovskii
S. V. Trubin
Publication date
13-11-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2019
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-0351-z

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